SQM50028EM
www.vishay.com
Vishay Siliconix
S17-0937-Rev. B, 19-Jun-17
2
Document Number: 74738
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA
V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 250 μA
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 100 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.00163 0.00200
ΩV
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.00300
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.00360
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 142 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 9100 11 900
pF Output capacitance C
oss
- 3550 4700
Reverse transfer capacitance C
rss
- 160 220
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 50 A
- 123 185
nC Gate-source charge
c
Q
gs
-40-
Gate-drain charge
c
Q
gd
-19-
Gate resistance R
g
f = 1 MHz 4 8.6 13 Ω
Turn-on delay time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.6 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 1 Ω
-4875
ns
Rise time
c
t
r
-2640
Turn-off delay time
c
t
d(off)
- 105 160
Fall time
c
t
f
-2540
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
- - 240 A
Forward voltage V
SD
I
F
= 50 A, V
GS
= 0 V - 0.84 1.5 V
Body diode reverse recovery time t
rr
I
F
= 25 A, di/dt = 100 A/μs
- 100 200 ns
Body diode reverse recovery charge Q
rr
- 243 500 nC
Reverse recovery fall time t
a
-48-
ns
Reverse recovery rise time t
b
-53-
Body diode peak reverse recovery current I
RM(REC)
--4.6- A
