BYR5D-1200PJ

BYR5D-1200P
Ultrafast power diode
Rev.01 - 8 November 2017
Product data sheet
1. General description
EEPP
TM
- Efciency Enhanced Pt Planar rectier in a TO-252 (DPAK) surface-mountable plastic
package.
2. Features and benets
Fast switching
Reduces switching losses with improved lower reverse recovery charge
Soft recovery characteristics
Low thermal resistance
Low leakage current
Planar termination structure
High operating temperature capability (T
j (max)
= 175°C)
Higher I
FSM
capability
3. Applications
Dual mode (DCM and CCM) Power Factor Correction (PFC)
Power Factor Correction (PFC) for Interleaved Topology
U-inverter (DC-AC converter for individual solar panels)
Motor drive and SMPS freewheeling diode
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
V
RRM
repetitive peak reverse
voltage
1200 V
I
F(AV)
average forward current δ = 0.5 ; square-wave pulse; T
mb
144 °C;
Fig. 1; Fig. 2; Fig. 3
5 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 μs; T
mb
≤ 144 °C;
square-wave pulse
10 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
55 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse 60 A
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 5 A; T
j
= 25 °C; Fig. 6 - 1.70 2.2 V
I
F
= 5 A; T
j
= 150 °C; Fig. 6 - 1.55 - V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; Fig. 7
- 50 - ns
WeEn Semiconductors
BYR5D-1200P
Ultrafast power diode
BYR5D-1200P
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
8
November
2017 2 / 10
6. Ordering information
Type number Package
Name Description Version
BYR5D-1200P TO-252 plastic single-ended surface-mounted package (DPAK); 3-leads
(one lead cropped)
TO-252N
Table 3. Ordering information
7. Marking
Type number Marking codes
BYR5D-1200P BYR5D-1200P
Table 4. Marking codes
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 n.c. no connected
DPAK (TO-252N)
mb
A
001aaa020
K
2 K cathode[1]
3 A anode
mb mb mounting base; connected to
cathod
[1] It is not possible to connect to pin 2 of the TO-252 package.
WeEn Semiconductors
BYR5D-1200P
Ultrafast power diode
BYR5D-1200P
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
8
November
2017 3 / 10
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
V
RRM
repetitive peak reverse
voltage
1200 V
V
RWM
crest working reverse
voltage
1200 V
V
R
reverse voltage DC 1200 V
I
F(AV)
average forward current δ = 0.5 ; square-wave pulse; T
mb
≤ 144 °C;
Fig. 1; Fig. 2; Fig. 3
5 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 μs; T
mb
≤ 144 °C;
square-wave pulse
10 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
55 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse 60 A
T
stg
storage temperature -65 to 175 °C
T
j
junction temperature 175 °C
012345678
0
4
8
12
16
20
I
F(AV)
(A)
P
tot
(W)
auf3-001
δ
= 1
0.5
0.2
0.1
012345
0
2
4
6
8
10
12
I
F(AV)
(A)
P
tot
(W)
auf3-002
a = 1.57
1.9
2.2
2.8
4.0
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.737 V; R
s
= 0.0750 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
Vo = 1.737 V; Rs = 0.0750 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values

BYR5D-1200PJ

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers BYR5D-1200P/DPAK/REEL 13\" Q1/T1 *STANDARD MARK SMD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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