Preliminary Data Sheet PN10671EJ01V0DS
4
PS9551L4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol MIN. MAX. Unit
Operating Ambient Temperature TA 40 85 °C
Storage Temperature Tstg 55 125 °C
V egatloV ylppuS DD1, VDD2 0 5.5 V
V egatloV tupnI IN+, VIN 2 VDD1+0.5 V
2 Seconds Transient Input Voltage VIN+, VIN 6 VDD1+0.5 V
Output Voltage
MCLK, MDAT
0.5 VDD2+0.5 V
RECOMMENDED OPERATING CONDITIONS (TA = 25°C, unless otherwise specified)
Parameter Symbol MIN. MAX. Unit
Operating Ambient Temperature TA 40 85 °C
V egatloV ylppuS DD1, VDD2 4.5 5.5 V
Input Voltage (Accurate and Linear) VIN+, VIN 200 200 mV
Preliminary Data Sheet PN10671EJ01V0DS
5
PS9551L4
ELECTRICAL CHARACTERISTICS (DC Characteristics)
(TYP.: T
A = 25°C, VIN+ = VIN = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: T
A = 40 to +85°C, VIN+ = VIN = 200 to 200 mV, VDD1 = VDD2 = 4.5 to 5.5 V, unless
otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
I tnerruC ylppuS tupnI DD1 VIN+ Am 81 5.41 Vm 053 =
Output Supply Current IDD2 VIN+ = 51 01 Vm 053
I tnerruC saiB tupnI IN+ 0.8
μ
A
Low Level Output Voltage VOL IOUT V 6.0 1.0 Am 6.1 =
High Level Output Voltage VOH IOUT = 100
μ
V 9.4 9.3 A
Output Short-circuit Current IOSC VOUT = VDD2 or VOUT = GND2 30 mA
Equivalent Input Resistance RIN k 003 Ω
Output Clock Frequency fCLK zHM 2.31 01 2.8
Data Hold Time
*1
t HDDAT sn 51
Input DC Common-Mode Rejection
Ratio
*2
CMRR
IN Bd 06
*1 The data hold time is that MDAT will stay stable following the rising edge of MCLK.
*2 CMRR
IN is defined as the ratio of the differential signal gain (apply the differential signal between VIN+ and VIN) to
the isolation-mode gain (connect both input pins to GND1 and apply the signal between (PS9551L4’s) input and
output) at 60 Hz. This value is indicated in dB.
Preliminary Data Sheet PN10671EJ01V0DS
6
PS9551L4
ELECTRICAL CHARACTERISTICS (Tested with filter IC (specified by NEC Electronics))
(TYP.: T
A = 25°C, VIN+ = VIN = 0 V, VDD1 = VDD2 = 5 V,
MIN., MAX.: T
A = 40 to +85°C, VIN+ = VIN = 200 to 200 mV, VDD1 = VDD2 = 4.5 to 5.5 V, unless
otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Integral Non-linearity
*1
INL 200 mV VIN+ 200 mV 12 30 LSB
% 41.0 40.0
V egatloV tesffO tupnI os VIN+ = 0 V 3 0 3 mV
Input Offset Voltage Drift
vs. Temperature
dVos/dTA
V
IN+ = 0 V, TA = 40 to 85°C
2 10
μ
V/°C
Input Offset Voltage Drift
vs. V
DD1
dV
os/dVDD1 VIN+ V/Vm 21.0 V 0 =
Internal Reference Voltage VREF Vm 023
Absolute Internal Reference Voltage
Tolerance
4 4 %
Internal Reference Voltage Drift
vs. Temperature
dVREF/dTA
T
A = 40 to 85°C
60 ppm/°C
Common Mode Transient Immunity
*2
CMR VCM = 1 kV, TA = 25°C 10 15 kV/
μ
s
*1 Integral Non-linearity: Half of peak-to-peak output voltage deviation from best fit gain line.
*2 CMR is tested by applying steep rise/fall time (50 ns) voltage step between PS9551L4’s input and output.
PACKAGE CHARACTERISTICS
Parameter Symbol Conditions MIN. TYP. MAX. Unit
T ,.nim 1 = t ,%06 = HR VB egatloV noitalosI A = 25°C 5 000 Vr.m.s.
R ecnatsiseR noitalosI I-O VI-O = 500 VDC > 10
9
Ω
Isolation Capacitance CI-O Fp 2.1 zHM 1 = f
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1
μ
F is used between VDD and GND near device. Also, ensure that the
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) Make sure the distance between input terminal (V
IN+ and VIN) of PS9551L4 and the devices (or components)
to be connected is as close as possible.
(3) Make sure the distance between output terminal (V
OUT+ and VOUT) of PS9551L4 and the devices (or
components) to be connected is as close as possible.
3. Avoid storage at a high temperature and high humidity.

PS9551L4-AX

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
Optically Isolated Amplifiers High CMR Digital Output Type
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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