OT407_1 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 01 — 19 May 2008 2 of 12
NXP Semiconductors
OT407
Four-quadrant triac, enhanced noise immunity
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
OT407 - plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
V
RRM
repetitive peak reverse voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 38 °C; see
Figure 4 and 5
-1A
I
TSM
non-repetitive peak on-state current full sine wave; T
j
=25°C prior to
surge; see
Figure 2 and 3
t = 20 ms - 12.5 A
t = 16.7 ms - 13.8 A
I
2
tI
2
t for fusing t
p
= 10 ms - 1.28 A
2
s
dI
T
/dt rate of rise of on-state current I
TM
= 1 A; I
G
= 20 mA;
dI
G
/dt = 0.2 A/µs
T2+ G+ - 50 A/µs
T2+ G− -50A/µs
T2− G− -50A/µs
T2− G+ - 10 A/µs
I
GM
peak gate current - 1 A
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 125 °C