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IRF9328TRPBF

P1-P3P4-P6P7-P8
www.irf.com 1
5/26/10
IRF9328PbF
HEXFET
®
Power MOSFET
Notes through are on page 2
PD - 97518
Features and Benefits
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features
Resulting Benefits
SO-8
Industry-Standard SO8 Package Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
Absolute Maximum Ratings
Parameter Un its
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Conti nuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Conti nuous Drain Current, V
GS
@ 10V
I
DM
Pul sed Drain Current
P
D
@T
A
= 25°C Power Dissipation
P
D
@T
A
= 70°C Power Dissipation
Linear Derating Factor W/°C
T
J
Operat ing Juncti on and
T
STG
Storage Temperature Range
-55 to + 150
2.5
0.02
1.6
Max.
-12
-9.6
-96
± 20
-30
V
A
W
°C
Note
Form Quantity
IRF932 8PbF SO8 Tube/Bulk 95
IRF932 8TRPbF SO8 Ta
p
e and Reel 4000
Orderabl e part number Package Type Standard Pack
V
DS
-30 V
R
DS(on) max
(@V
GS
= -10V)
11.9
mΩ
R
DS(on) max
(@V
GS
= -4.5V)
19.7
mΩ
Q
g (typical)
18 nC
I
D
(@T
A
= 25°C)
-12 A
IRF9328PbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 2.6mH, R
G
= 25Ω, I
AS
= -9.6A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
R
DS(on)
––– 10 11.9
––– 16.1 19.7
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.4 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 20 ––– ––– S
Q
g
Total Gate Charge –––18–––nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= - 9.6A
Q
g
Total Gate Charge ––– 35 52
Q
gs
Gate-to-Source Charge ––– 5.3 –––
Q
gd
Gate-to-Drain Charge ––– 8.5 –––
R
G
Gate Resistance –––15––– Ω
t
d(on)
Turn-On Delay Time ––– 19 –––
t
r
Rise Time –––57–––
t
d(off)
Turn-Off Delay Time ––– 80 –––
t
f
Fall Time –––66–––
C
iss
Input Capacitance ––– 1680 –––
C
oss
Output Capacitance ––– 350 –––
C
rss
Reverse Transfer Capacitance ––– 220 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 51 76 ns
Q
rr
Reverse Recovery Charge ––– 35 53 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
R
θJA
Junction-to-Ambient
Conditions
See Figs. 20a &20b
Max.
120
-9.6
ƒ = 1.0kHz
V
GS
= 0V
V
DS
= -25V
V
DS
= -24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -12A
V
DS
= V
GS
, I
D
= -25μA
V
GS
= -4.5V, I
D
= -9.6A
m
Ω
μA
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
di/dt = 100A/μs
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= -9.6A
R
G
= 6.8
Ω
V
DS
= -10V, I
D
= -9.6A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
I
D
= -1.0A
V
DS
= -15V
V
GS
= -20V
V
GS
= 20V
V
GS
= -10V
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
-2.5
-96
nA
nC
°C/W
Max.
20
50
Typ.
–––
–––
IRF9328PbF
www.irf.com 3
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
-2.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
BOTTOM -2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
-2.5V
1.0 2.0 3.0 4.0 5.0 6.0
-V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= -10V
≤
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -12A
V
GS
= -10V
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 8 16 24 32 40 48
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -24V
V
DS
= -15V
V
DS
= -6.0V
I
D
= -9.6A
P1-P3P4-P6P7-P8

IRF9328TRPBF

Mfr. #:
Buy IRF9328TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT P-Ch -30V -12A 11.9mOhm
Lifecycle:
New from this manufacturer.
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