VT10200C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 01-Dec-16
1
Document Number: 87997
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.58 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
Package TO-220AB
I
F(AV)
2 x 5.0 A
V
RRM
200 V
I
FSM
80 A
V
F
at I
F
= 5.0 A 0.65 V
T
J
max. 150 °C
Diode variations Common cathode
1
2
3
PIN 1
PIN 2
CASE
PIN 3
TO-220AB
VT10200C
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT10200C UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
10.0
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
80 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
200 (minimum) - V
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.81 -
V
I
F
= 5.0 A 1.10 1.60
I
F
= 2.5 A
T
A
= 125 °C
0.58 -
I
F
= 5.0 A 0.65 0.73
Reverse current per diode
V
R
= 180 V
T
A
= 25 °C
I
R
(2)
1.7 - μA
T
A
= 125 °C 1.8 - mA
V
R
= 200 V
T
A
= 25 °C - 150 μA
T
A
= 125 °C 2.5 10 mA
