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IRG4BC10UDPBF
P1-P3
P4-P6
P7-P9
P10-P11
IRG4BC10UDPbF
www
.irf.com
7
Fig.
16
-
Typical
Stored
Charge
vs.
di
f
/dt
Fig. 17
- Typical
di
(rec)M
/dt vs.
di
f
/dt,
Fig.
14
-
Typical
Reverse
Recovery
vs.
di
f
/dt
Fig.
15
-
Typical
Recovery
Current
vs.
di
f
/dt
di
(rec)
M/dt-
(A
/µs)
Qrr-
(nC)
Irr-
(
A
)
trr- (nC)
20
25
30
35
40
45
50
100
1000
f
di /dt - (A
/µs)
I = 8.0A
I =
4.
0
A
F
F
V =
200V
T = 125°C
T = 25°C
R
J
J
0
2
4
6
8
10
12
14
100
1000
f
I =
8.
0
A
I =
4.0
A
V = 20
0V
T =
125°
C
T = 25°C
R
J
J
di /dt - (A
/µ
s)
F
F
0
40
80
120
160
200
100
1000
f
di /dt - (A
/µs)
I = 8.0A
I =
4.0
A
V
= 200V
T = 1
25°C
T = 25°C
R
J
J
F
F
100
1000
100
1000
f
di /dt - (A
/µs
)
A
I = 8.0A
I = 4.0A
V = 20
0V
T =
125°
C
T = 25°C
R
J
J
F
F
IRG4BC10UDPbF
8
www
.irf.com
Same t
y
pe
device
as
D.U
.T.
D.U.T.
430µ
F
80%
of Vc
e
Fig.
18a
-
Test
Circuit
for
Measurement
of
I
LM
,
E
on
,
E
off(diode)
,
t
rr
,
Q
rr
,
I
rr
,
t
d(on)
,
t
r
,
t
d(off)
,
t
f
t1
Ic
Vce
t1
t2
90% Ic
10% Vce
td(
off)
tf
Ic
5% I
c
t1+
5µ
S
Vce ic
dt
90% Vge
+Vge
∫
Eof
f =
Fig. 18b
-
Test
Waveforms
for
Circuit of
Fig.
18a,
Defining
E
off
, t
d(off)
, t
f
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vc
c
10% Ic
Vce
t1
t2
DUT VO
LTAGE
AN
D CU
RRE
NT
GATE VOLTA
GE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec =
t4
t3
Vd id dt
t4
t3
DI
ODE
RE
CO
V
ERY
W
AVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qr
r
=
trr
tx
id
dt
Fig. 18c
-
Test
Waveforms for Circuit of
Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d
-
Test Waveforms
for Circuit of
Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Vd
Ic
dt
Vce
Ic
dt
Ic dt
Vce
Ic
dt
IRG4BC10UDPbF
www
.irf.com
9
Vg
GATE
SIGNAL
DEVI
CE
U
NDE
R T
E
S
T
CURR
E
NT D
.U
.T
.
VOLTA
GE IN
D.U.T.
CURR
E
NT I
N
D1
t0
t1
t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure
19.
Clamped
Inductive
Load
Test
Circuit
Figure
20.
Pulsed
Collector
Current
Test
Circuit
R
L
=
480V
4 X
I
C
@25°C
0 -
480V
Figure
18e.
Macro
Waveforms
for
Figure
18a's
Test
Circuit
P1-P3
P4-P6
P7-P9
P10-P11
IRG4BC10UDPBF
Mfr. #:
Buy IRG4BC10UDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast 8-60kHz
Lifecycle:
New from this manufacturer.
Delivery:
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IRG4BC10UDPBF
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