KSA1201YTF Datasheet KSA1201YTF, KSA1201OTF | P1-P3

1

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KSA1201 Rev. B2

KSA1201 PNP Epitaxial Silicon Transistor

July 2005

KSA1201

PNP Epitaxial Silicon Transistor

Power Amplifier

• Collector-Emitter Voltage: V

CEO

= -120V

•f

T

=120MHz

• Collector Power Dissipation P

C

=1~2W : Mounted on Ceramic Board

• Complement to KSC2881

Absolute Maximum Ratings

T

a

= 25°C unless otherwise noted

* Mounted on Ceramic Board (250mm

2

x 0.8mm)

Electrical Characteristics

T

a

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

CBO

Collector Base Voltage -120 V

V

CEO

Collector-Emitter Voltage -120 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current -800 mA

I

B

Base Current -160 mA

P

C

P

C

*

Collector Power Dissipation 500

1,000

mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= -10mA, I

B

= 0 -120 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -1mA, I

C

= 0 -5 V

I

CBO

Collector Cut-off Current V

CB

= -120V, I

E

= 0 -100 nA

I

EBO

Emitter Cut-off Current V

BE

= -5V, I

C

= 0 -100 nA

h

FE

DC Current Gain V

CE

= -5V, I

C

= -100mA 80 240

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= -500mA, I

B

= -50mA -1.0 V

V

BE

(on) Base-Emitter On Voltage V

CE

= -5V, I

C

= -500mA -1.0 V

f

T

Current Gain Bandwidth Product V

CE

= -5V, I

C

= -100mA 120 MHz

C

ob

Output Capacitance V

CB

= -10V, I

E

= 0, f = 1MHz 30 pF

SOT-89

1

1. Base 2. Collector 3. Emitter

12 01

PY WW

h

FE

grage

Year code

Weekly code

Marking

2

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KSA1201 Rev. B2

KSA1201 PNP Epitaxial Silicon Transistor

h

FE

Classification

Package Marking and Ordering Information

Classification O Y

h

FE

80 ~ 160 120 ~ 240

Device Marking Device Package Reel Size Tape Width Quantity

1201 KSA1201 SOT-89 13” -- 4,000

3

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KSA1201 Rev. B2

KSA1201 PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Safe Operating Area Figure 6. Power Derating

-0 -4 -8 -12 -16

-0.2

-0.4

-0.6

-0.8

I

B

=0

I

B

=-3mA

I

B

=-2mA

I

B

=-7mA

I

B

=-5mA

I

B

=-4mA

I

B

=-10mA

I

B

=-1mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -1000

10

100

1000

V

CE

= -5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

I

C

= 10 I

B

V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0 25 50 75 100 125 150 175 200

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

M

o

u

n

t

e

d

o

n

C

e

r

a

m

i

c

B

o

a

r

d

(

2

5

0

m

2

X

0

.

8

m

)

P

C

[W], POWER DISSIPATION

T

a

[

o

C], AMBIENT TEMPERATURE

-0.1 -1 -10 -100 -1000

-1

-10

-100

-1000

-10000

1

m

s

I

C

MAX(DC)

10

0m

s

V

CEO

MAX

I

C

MAX(Pulse)

1

0

m

s

Ta=25

o

C

Single Pulse

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175 200

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

M

o

u

n

t

e

d

o

n

C

e

r

a

m

i

c

B

o

a

r

d

(

2

5

0

m

2

X

0

.

8

m

)

P

C

[W], POWER DISSIPATION

T

a

[

o

C], AMBIENT TEMPERATURE

KSA1201YTF

KSA1201YTF

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