1N6272AG Datasheet 1N6268ARL4, 1N6270ARL4G, 1N6272A | P1-P3

July, 2005 − Rev. 7

1 Publication Order Number:

1N6267A/D

1N6267A Series

1500 Watt Mosorbt Zener

Transient Voltage

Suppressors

Unidirectional*

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

Features

• Working Peak Reverse Voltage Range − 5.8 V to 214 V

• Peak Power − 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

• UL 497B for Isolated Loop Circuit Protection

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available

Mechanical Characteristics

CASE:

Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16 in from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

AXIAL LEAD

CASE 41A

PLASTIC

A = Assembly Location

1.5KExxxA = ON Device Code

1N6xxxA = JEDEC Device Code

YY = Year

WW = Work Week

= (See Table on Page 3)

G = Pb−Free Package

(Note: Microdot may be in either location)

Cathode Anode

Device Package Shipping

†

ORDERING INFORMATION

1.5KExxxA Axial Lead 500 Units/Box

1.5KExxxARL4 Axial Lead 1500/Tape & Reel

1N6xxxA Axial Lead 500 Units/Box

1N6xxxARL4 Axial Lead 1500/Tape & Reel

MARKING DIAGRAM

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1.5KE

xxxA

1N6

xxxA

YYWWG

1N6xxxARL4G Axial Lead

(Pb−Free)

1500/Tape & Reel

1N6xxxAG 500 Units/BoxAxial Lead

(Pb−Free)

1.5KExxxARL4G 1500/Tape & ReelAxial Lead

(Pb−Free)

1.5KExxxAG 500 Units/BoxAxial Lead

(Pb−Free)

Uni−Directional TVS

RWM

1N6267A Series

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation (Note 1) @ T

≤ 25°C P

1500 W

Steady State Power Dissipation

@ T

≤ 75°C, Lead Length = 3/8 in

Derated above T

= 75°C

5.0

mW/°C

Thermal Resistance, Junction−to−Lead

20 °C/W

Forward Surge Current (Note 2) @ T

= 25°C I

FSM

200 A

Operating and Storage

Temperature Range

, T

stg

− 65 to +175 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Nonrepetitive current pulse per Figure 5 and derated above T

= 25°C per Figure 2.

2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices

ELECTRICAL CHARACTERISTICS (T

= 25°C unless

otherwise noted, V

= 3.5 V Max., I

(Note 3) = 100 A)

Symbol Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Maximum Temperature Coefficient of V

Forward Current

Forward Voltage @ I

1N6267A Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted, V

= 3.5 V Max. @ I

(Note 3) = 100 A)

Device

†

JEDEC

Device

†

(Note 4)

RWM

(Note 5)

@ V

RWM

Breakdown Voltage V

@ I

(Note 7)

(Note 6) (Volts) @ I

(Volts)

(mA)

Min Nom Max (mA) (Volts) (A) (%/°C)

1.5KE6.8A, G 1N6267A, G 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057

1.5KE7.5A, G 1N6268A, G 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061

1.5KE8.2A, G 1N6269A, G 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065

1.5KE9.1A, G 1N6270A, G 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068

1.5KE10A, G 1N6271A, G 8.55 10 9.5 10 10.5 1 14.5 103 0.073

1.5KE11A, G 1N6272A, G 9.4 5 10.5 11 11.6 1 15.6 96 0.075

1.5KE12A, G 1N6273A, G 10.2 5 11.4 12 12.6 1 16.7 90 0.078

1.5KE13A, G 1N6274A, G 11.1 5 12.4 13 13.7 1 18.2 82 0.081

1.5KE15A, G 1N6275A, G 12.8 5 14.3 15 15.8 1 21.2 71 0.084

1.5KE16A, G 1N6276A, G 13.6 5 15.2 16 16.8 1 22.5 67 0.086

1.5KE18A, G 1N6277A, G 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088

1.5KE20A, G 1N6278A, G 17.1 5 19 20 21 1 27.7 54 0.09

1.5KE22A, G 1N6279A, G 18.8 5 20.9 22 23.1 1 30.6 49 0.092

1.5KE24A, G 1N6280A, G 20.5 5 22.8 24 25.2 1 33.2 45 0.094

1.5KE27A, G 1N6281A, G 23.1 5 25.7 27 28.4 1 37.5 40 0.096

1.5KE30A, G 1N6282A, G 25.6 5 28.5 30 31.5 1 41.4 36 0.097

1.5KE33A, G 1N6283A, G 28.2 5 31.4 33 34.7 1 45.7 33 0.098

1.5KE36A, G 1N6284A, G 30.8 5 34.2 36 37.8 1 49.9 30 0.099

1.5KE39A, G 1N6285A, G 33.3 5 37.1 39 41 1 53.9 28 0.1

1.5KE43A, G 1N6286A, G 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101

1.5KE47A, G 1N6287A, G 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101

1.5KE51A, G 1N6288A, G 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102

1.5KE56A, G 1N6289A, G 47.8 5 53.2 56 58.8 1 77 19.5 0.103

1.5KE62A, G 1N6290A, G 53 5 58.9 62 65.1 1 85 17.7 0.104

1.5KE68A, G 1N6291A, G 58.1 5 64.6 68 71.4 1 92 16.3 0.104

1.5KE75A, G 1N6292A, G 64.1 5 71.3 75 78.8 1 103 14.6 0.105

1.5KE82A, G 1N6293A, G 70.1 5 77.9 82 86.1 1 113 13.3 0.105

1.5KE91A, G 1N6294A, G 77.8 5 86.5 91 95.5 1 125 12 0.106

1.5KE100A, G 1N6295A, G 85.5 5 95 100 105 1 137 11 0.106

1.5KE110A, G 1N6296A, G 94 5 105 110 116 1 152 9.9 0.107

1.5KE120A, G 1N6297A, G 102 5 114 120 126 1 165 9.1 0.107

1.5KE130A, G 1N6298A, G 111 5 124 130 137 1 179 8.4 0.107

1.5KE150A, G 1N6299A, G 128 5 143 150 158 1 207 7.2 0.108

1.5KE160A, G 1N6300A, G 136 5 152 160 168 1 219 6.8 0.108

1.5KE170A, G 1N6301A, G 145 5 162 170 179 1 234 6.4 0.108

1.5KE180A, G 1N6302A, G* 154 5 171 180 189 1 246 6.1 0.108

1.5KE200A, G 1N6303A, G 171 5 190 200 210 1 274 5.5 0.108

1.5KE220A, G 185 5 209 220 231 1 328 4.6 0.109

1.5KE250A, G 214 5 237 250 263 1 344 5 0.109

Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.

3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

4. Indicates JEDEC registered data

5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V

RWM

), which should be equal to or

greater than the dc or continuous peak operating voltage level.

6. V

measured at pulse test current I

at an ambient temperature of 25°C

7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

†The “G” suffix indicates Pb−Free package available.

*Not Available in the 1500/Tape & Reel

P1-P3 P4-P6 P7-P8

1N6272AG

Mfr. #:

Buy 1N6272AG

Manufacturer:

ON Semiconductor

Description:

TVS DIODE 9.4V 15.6V AXIAL

Lifecycle:

New from this manufacturer.

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1N6272AG

1N6272AG

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