© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 7
1 Publication Order Number:
2N6394/D
2N6394 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
•Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 V
•Pb-Free Packages are Available*
MAXIMUM RATINGS
†
(T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open) 2N6394
2N6395
2N6397
2N6399
V
DRM,
V
RRM
50
100
400
800
V
On‐State RMS Current
(180° Conduction Angles; T
C
= 90°C)
I
T(RMS)
12 A
Peak Non‐Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 90°C)
I
TSM
100 A
Circuit Fusing (t = 8.3 ms) I
2
t 40 A
2
s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, T
C
= 90°C)
P
GM
20 W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 90°C)
P
G(AV)
0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T
C
= 90°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
-40 to +125 °C
Storage Temperature Range T
stg
-40 to +150 °C
MAXIMUM RATINGS
†
(T
J
= 25°C unless otherwise noted)
Rating
Symbol Max Unit
Thermal Resistance, Junction-to-Case
R
q
JC
2.0 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 10 Seconds
T
L
260 °C
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
G
A
Preferred devices are recommended choices for future use
and best overall value.
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TO-220AB
CASE 221A
STYLE 3
1
2
3
4
2N639x = Device Code
x = 4, 5, 7, or 9
G = Pb-Free Package
A = Assembly Location
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N639xG
AYWW
