October 2016
DocID018247 Rev 2
1/13
This is information on a product in full production.
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STPS1L40-Y
Automotive low drop power Schottky rectifier
Datasheet - production data
Features
AEC-Q101 qualified
Very small conduction losses
Negligible switching losses
Low forward voltage drop
Surface mount miniature packages
Avalanche capability specified
PPAP capable
Description
Single chip Schottky rectifiers suited to switched
mode power supplies and high frequency DC to
DC converters.
Packaged in SOD123Flat, SMA and SMB, this
device is especially intended for surface
mounting and used in low voltage, high frequency
inverters, free-wheeling and polarity protection in
automotive applications.
Table 1: Device summary
Symbol
I
F(AV)
1 A
V
RRM
40 V
V
F
(typ.)
0.37 V
T
j
(max.)
175 °C
K
A
SMBSMA
K
A
K
A
SOD123Flat
A
K
Characteristics
STPS1L40-Y
2/13
DocID018247 Rev 2
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
T
j
= -40 °C to +175 °C
40
V
I
F(AV)
Average forward current
δ = 0.5, square wave
SMA/SMB: T
L
= 155 °C
1
A
SOD123Flat: T
L
= 160 °C
I
FSM
Surge non repetitive forward current,
t
p
= 10 ms sinusoidal
SMA/SMB
60
A
SOD123Flat
50
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
65
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
(1)
-40 to +175
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-l)
Junction to lead
SMA
30
°C/W
SMB
25
SOD123Flat
20
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
35
µA
T
j
= 125 °C
-
6
10
mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
-
0.50
V
T
j
= 125 °C
-
0.37
0.42
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.23 x I
F(AV)
+ 0.19 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power
losses.
AN604 (Calculation of conduction losses in a power rectifier)
AN4021 (Calculation of reverse losses in a power diode)
STPS1L40-Y
Characteristics
DocID018247 Rev 2
3/13
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Average forward current versus ambient
temperature (δ = 0.5)
Figure 4: Average forward current versus ambient
temperature (δ = 0.5)
Figure 5: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
Figure 6: Relative variation of thermal impedance
junction to ambient versus pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
δ = 0.05
δ = 0.1
δ = 0.2 δ = 0.5
δ = 1
T
δ
= tp/T
tp
I
F(AV)
(A)
P
F(AV)
(W)
I
F(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
SMA
T
amb
C)
I
F(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
= tp/T
tp
δ
SMB
T
amb
C)
0
1
2
3
4
5
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
SOD123 flat
T
amb
C)
I
F(AV)
(A)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t s)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t
P
(s)
Single pulse
SMA
Z
th(j-a)
/R
th(j-a)
Epoxy printed circuit board,
copper thickness = 35 µm, 
recommended pad layout

STPS1L40AY

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Auto pwr Schottky 1A 40V VRRM 0.42VF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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