VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 08-Jun-16
1
Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESD-Protection Diode in LLP1006-2L
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.01 μA
• Low load capacitance C
D
= 22.5 pF
(V
R
= 6 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 I
PP
> 8 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
MINIMUM ORDER QUANTITY
VESD12A1A-HD1 VESD12A1A-HD1-GS08 8000 8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD12A1A-HD1 LLP1006-2L K 0.72 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD12A1A-HD1
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot I
PPM
8A
Peak pulse power Acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot P
PP
200 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
stg
-55 to +150 °C