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3KASMC20AHE3_B/I

P1-P3P4-P6
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 08-Jun-16
1
Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESD-Protection Diode in LLP1006-2L
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.01 μA
• Low load capacitance C
D
= 22.5 pF
(V
R
= 6 V; f = 1 MHz)
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• High surge current acc. IEC61000-4-5 I
PP
> 8 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
20855
20856
2
1
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE on 7" REEL)
MINIMUM ORDER QUANTITY
VESD12A1A-HD1 VESD12A1A-HD1-GS08 8000 8000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD12A1A-HD1 LLP1006-2L K 0.72 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD12A1A-HD1
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot I
PPM
8A
Peak pulse power Acc. IEC 61000-4-5; t
P
= 8/20 μs; single shot P
PP
200 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
stg
-55 to +150 °C
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 08-Jun-16
2
Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD12A1A-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakthrough voltage (V
BR
) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the VESD12A1A-HD1 clamping behaviour is bidirectional
and asymmetrical (BiAs).
ELECTRICAL CHARACTERISTICS VESD12A1A-HD1
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of line which can be protected N
channel
- - 1 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--12V
Reverse voltage at I
R
= 0.1 μA V
R
12 - - V
Reverse current at V
R
= 12 V I
R
- < 0.01 0.1 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
13.5 14 16 V
Reverse clamping voltage
at I
PP
= 1 A V
C
- 14.8 17 V
at I
PP
= I
PPM
= 8 A V
C
-2124V
Forward clamping voltage
at I
PP
= 0.2 A V
F
- 0.85 1.2 V
at I
PP
= 1 A V
F
-1.01.3V
at I
PP
= I
PPM
= 8 A V
F
-2.02.5V
Capacitance
at V
R
= 0 V; f = 1 MHz C
D
-5465pF
at V
R
= 6 V; f = 1 MHz C
D
- 22.5 - pF
L1
20925
2
1
Ground
BiAs
VESD12A1A-HD1
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 08-Jun-16
3
Document Number: 81879
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Forward Current I
F
vs. Forward Voltage V
F
Fig. 5 - Typical Reverse Voltage V
R
vs.
Reverse Current I
R
Fig. 6 - Typical Clamping Voltage vs.
Peak Pulse Current I
PP
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
0
10
20
30
40
50
60
024681012
f = 1 MHz
BiAs-mode
V
R
(V)
C
D
(pF)
21288
0.001
0.01
0.1
1
10
100
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85
21289
V
F
(V)
I
F
(mA)
BiAs-mode
0
2
4
6
8
10
12
14
16
0.01 0.1 1 10 100 1000 10 000
21290
I
R
(µA)
V
R
(V)
BiAs-mode
P1-P3P4-P6

3KASMC20AHE3_B/I

Mfr. #:
Buy 3KASMC20AHE3_B/I
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 3.0KW,20V 5%,SMC PAR AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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