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PHPT61010NY
100 V, 10 A NPN high power bipolar transistor
20 March 2015 Product data sheet
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1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
PNP complement: PHPT61010PY
2. Features and benefits
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - 100 V
I
C
collector current - - 10 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 20 A
R
CEsat
collector-emitter
saturation resistance
I
C
= 10 A; I
B
= 1 A; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C; pulsed
- 25 37
NXP Semiconductors
PHPT61010NY
100 V, 10 A NPN high power bipolar transistor
PHPT61010NY All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 20 March 2015 2 / 16
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 E emitter
3 E emitter
4 B base
mb C collector
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
sym123
C
E
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PHPT61010NY LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
PHPT61010NY 1010NAB

PHPT61010NYX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 100V 10A NPN high power bipolar
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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