©2004 Fairchild Semiconductor Corporation Rev. A, September 2004
BSR13
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 0.5 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 30 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
a
= 150°C
30
10
nA
µA
I
EBO
Emitter Cutoff Current V
EB
= 3.0V, I
C
= 0 15 nA
On Characteristics
h
FE
DC Current Gain I
C
= 0.1mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V *
I
C
= 150mA, V
CE
= 1.0V *
I
C
= 500mA, V
CE
= 10V *
35
50
75
100
50
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage * I
C
= 150mA, I
B
= 15V
I
C
= 500mA, I
B
= 50V
0.4
1.6
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15V
I
C
= 500mA, I
B
= 50V
1.3
2.6
V
Small Signal Characteristics
f
T
Curent Gain Bandwidth Product I
C
= 20mA, V
CE
= 20V, f = 100MHz 250
BSR13
NPN General Purpose Amplifier
• Sourced from process 10.
SOT-23
B
E
C
Mark: U7
