Characteristics TN1205T-600
2/8 Doc ID 16339 Rev 1
1 Characteristics
Table 2. Absolute ratings
(1)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180 °C conduction angle) T
c
= 103 °C 12 A
I
T(AV)
Average on-state current(180 °C conduction angle) T
c
= 103 °C 8 A
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
t
p
= 10 ms
120
115
A
I
2
TI
2
T value for fusing t
p
= 10 ms 66 A
2
s
di/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
c
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
Storage junction temperature range -40 to + 150
°C
T
j
Operating junction temperature range -40 to + 125
1. T
j
= 25 °C, unless otherwise specified
Table 3. Electrical characteristics
(1)
Symbol Test conditions Min. Typ. Max. Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω 25mA
V
GT
V
D
= 12 V, R
L
= 33 Ω 1.3 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ T
j
= 125 °C 0.2 V
I
H
I
T
= 500 mA gate open 15 mA
I
L
I
G
= 1.2 I
GT
30 mA
dV/dt V
D
= 67% V
DRM
gate open T
j
= 125 °C 100 V/µs
t
GT
Gate controlled turn on time
I
TM
= 40 A, V
D
= V
DRM(MAX)
, I
GT
= 100 mA
dI
G
/dt = 5 A/µs, R
G
= 68 Ω
1.2 µs
t
q
Circuit commutated turn off time
V
D
= 67% V
DRM(MAX)
, T
j
= 125 °C, I
TM
= 20 A, V
R
= 25 V
dI
T
/dt = 30 A/µS, dV
D
/dt = 50 V/µs, R
GK
= 100 Ω
55 µs
V
TM
I
TM
= 24 A, T
p
= 380 µs 1.6 V
V
T0
Threshold voltage T
j
= 125 °C 0.85 V
R
d
Dynamyc restistance T
j
= 125 °C 30 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C 5 µA
T
j
= 125 °C 2 mA
1. T
j
= 25 °C, unless otherwise specified
