OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SD56120M

P1-P3P4-P6P7-P9P10-P12P13-P14
July 2006 Rev 10 1/14
14
SD56120M
RF POWER Transistors, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration Push-pull
■ P
OUT
= 120W with 13dB gain @ 860MHz / 32V
■ BeO free package
■ Internal input matching
Description
The SD56120M is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120M is designed for high
gain and broadband performance operating in
common source mode at 32 V. Its internal
matching makes it ideal for TV broadcast
applications requiring high linearity.
Pin connection
M252
Epoxy sealed
1
3
5
2
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
4
www.st.com
Order codes
Part number Package Branding
SD56120M M252 SD56120M
Contents SD56120M
2/14
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
SD56120M Electrical data
3/14
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 1. Absolute maximum ratings (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 65 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 14 A
P
DISS
Power Dissipation (@ Tc = 70°C) 236 W
Tj Max. Operating Junction Temperature 200 °C
T
STG
Storage Temperature -65 to +150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 0.55 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P14

SD56120M

Mfr. #:
Buy SD56120M
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch 65 Volt 14 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet