1999 May 21 2
NXP Semiconductors Product data sheet
NPN high-voltage transistors PMSTA42; PMSTA43
FEATURES
• High current (max. 500 mA)
• High voltage (max. 200 V).
APPLICATIONS
• High-voltage switching in telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PNP
complements: PMSTA92 and PMSTA93.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
PMSTA42 ∗1D
PMSTA43 ∗1E
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
PMSTA42 − 300 V
PMSTA43 − 200 V
V
CEO
collector-emitter voltage open base
PMSTA42 − 300 V
PMSTA43 − 200 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
