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NIF5002NT3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
1 Publication Order Number:
NIF5002N/D
NIF5002N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Pb−Free Packages are Available
Applications
• Lighting
• Solenoids
• Small Motors
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 V
Drain−to−Gate Voltage Internally Clamped
(R
G
= 1.0 MW)
V
DGR
42 V
Gate−to−Source Voltage V
GS
"14 V
Continuous Drain Current I
D
Internally Limited
Power Dissipation @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
T
= 25°C (Note 3)
P
D
1.1
1.7
8.9
W
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A,
L = 300 mH, R
G(ext)
= 25 W)
E
AS
150 mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
*Max current limit value is dependent on input
condition.
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
165 mW @ 10 V
2.0 A*
A = Assembly Location
Y = Year
W = Work Week
5002N = Specific Device Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
AYW
5002N G
G
2
3
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
NIF5002N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Junction−to−Tab − Steady State (Note 3)
R
q
JA
R
q
JA
R
q
JT
114
72
14
°C/W
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
3. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 4)
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA
T
J
= 25°C 42 46 55
V
T
J
= 150°C 40 45 55
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 32 V
T
J
= 25°C 0.25 4.0
mA
T
J
= 150°C 1.1 20
Gate Input Current I
GSSF
V
DS
= 0 V, V
GS
= 5.0 V 50 100
mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 150 mA
1.3 1.8 2.2 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
4.0 6.0 −mV/°C
Static Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 1.7 A
T
J
= 25°C 165 200
mW
T
J
= 150°C 305 400
V
GS
= 5.0 V, I
D
= 1.7 A
T
J
= 25°C 195 230
T
J
= 150°C 360 460
V
GS
= 5.0 V, I
D
= 0.5 A
T
J
= 25°C 190 230
T
J
= 150°C 350 460
Source−Drain Forward On Voltage V
SD
V
GS
= 0 V, I
S
= 7.0 A 1.0 V
SWITCHING CHARACTERISTICS
Turn−on Time
t
d(on)
V
GS
= 10 V, V
DD
= 12 V,
I
D
= 2.5 A, R
L
= 4.7 W,
(10% V
in
to 90% I
D
)
20 30
ms
Turn−off Time t
d(off)
65 100
Slew Rate On dV
DS
/dt
on
R
L
= 4.7 W, V
in
= 0 to 10 V,
V
DD
= 12 V, 70% to 50%
1.2
V/ms
Slew−Rate Off dV
DS
/dt
off
R
L
= 4.7 W, V
in
= 0 to 10 V,
V
DD
= 12 V, 50% to 70%
0.5
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Current Limit I
LIM
V
DS
= 10 V, V
GS
= 5.0 V
T
J
= 25°C
3.1 4.7 6.3
A
T
J
= 150°C
2.0 3.2 4.3
V
DS
= 10 V, V
GS
= 10 V
T
J
= 25°C
3.8 5.7 7.6
T
J
= 150°C
2.8 4.3 5.7
Temperature Limit (Turn−off) T
LIM(off)
V
GS
= 5.0 V
150 175 200
°C
Temperature Limit (Circuit Reset) T
LIM(on)
V
GS
= 5.0 V
135 160 185
Temperature Limit (Turn−off) T
LIM(off)
V
GS
= 10 V
150 165 185
Temperature Limit (Circuit Reset) T
LIM(on)
V
GS
= 10 V
135 150 170
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability ESD
Human Body Model (HBM) 4000
V
Machine Model (MM) 400
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
NIF5002N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
100°C
0
7
4
31
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
3
1
0
Figure 1. On−Region Characteristics
12
1
4
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.3
46
0.5
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
2
1.5
1
0.5
0
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
1.0
35
T
J
= −55°C
I
D
= 1.7 A
T
J
= 25°C
0.15
0
75
T
J
= 25°C
I
D
= 1.7 A
V
GS
= 5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
2.5
V
GS
= 10 V
210
1
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
T
J
= 100°C
3.0 V
3.2 V
0.3
V
GS
= 5 V
1000
10000
10
4
5 V
V
DS
≥ 10 V
0.25
10 20
3.8 V
2
3.4 V
4
3
798
2345
4
0
30
6
5
3.6 V
0.1
0.2
0.4
0.7
0.9
0.6
0.8
0.05
0.1
100 125
100
2
3
1.5
2.5
3.5
2.6 V
4 V
6 V
7 V
8 V
9 V
10 V
2.8 V
P1-P3P4-P5

NIF5002NT3

Mfr. #:
Buy NIF5002NT3
Manufacturer:
ON Semiconductor
Description:
MOSFET 42V 2A N-Channel
Lifecycle:
New from this manufacturer.
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