PDTD123T_SER_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 16 November 2009 3 of 10
NXP Semiconductors
PDTD123T series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
3. Ordering information
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 4. Ordering information
Type number Package
Name Description Version
PDTD123TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTD123TS
[1]
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
PDTD123TT - plastic surface mounted package; 3 leads SOT23
Table 5. Marking codes
Type number Marking code
[1]
PDTD123TK E9
PDTD123TS TD123TS
PDTD123TT *1T
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
V
I
input voltage
positive - +12 V
negative - −5V
I
O
output current - 500 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
SOT346 - 250 mW
SOT54 - 500 mW
SOT23 - 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
