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DS2016-100+

P1-P3P4-P6P7-P8
1 of 8 032706
FEATURES
§ Low-power CMOS design
§ Standby current
- 50nA max at t
A
= +25°C V
CC
= 3.0V
- 100nA max at t
A
= +25°C V
CC
= 5.5V
- 1µA max at t
A
= +60°C V
CC
= 5.5V
§ Full operation for V
CC
= 5.5V to 2.7V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
- DS2016-100 100ns
§ Reduced-speed 3V access time
- DS2016-100 250ns
§ Operating temperature range of -40°C to
+85°C
§ Full static operation
§ TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7V
§ Available in 24-pin DIP and 24-pin SO
packages
§ Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
PIN DESCRIPTION
A0 to A10 - Address Inputs
DQ0 to DQ7 - Data Input/Output
CE - Chip Enable Input
WE - Write Enable Input
OE - Output Enable Input
V
CC
- Power Supply Input 2.7V - 5.5V
GND - Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7V and 5.5V. The chip enable input ( CE ) is used for device
selection and can be used in order to achieve the minimum standby current mode, which facilitates both
battery operated and battery backup applications. The device provides access times as fast as 100ns when
operated from a 5V power supply input and also provides relatively good performance of 250ns access
while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input
voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery
operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM
and is pin-compatible with ROM and EPROM of similar density.
DS2016
2k x 8 3V/5V Operation
Static RAM
www.maxim-ic.com
1
2
3
4
5
6
7
8
9
10
11
12 13
24
23
22
21
20
19
18
17
16
15
14
V
CC
A
8
A
9
WE
OE
A
10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ0
DQ1
DQ2
GND
DS2016 24-Pin DIP (600mil)
DS2016R 24-Pin SO (300mil)
DS2016
2 of 8
OPERATION MODE
MODE
CE
OE WE
A0-A10 DQ-DQ7 POWER
READ L L H STABLE DATA OUT I
CCO
WRITE L X L STABLE DATA IN I
CCO
DESELECT L H H X HIGH-Z I
CCO
STANDBY H X X X HIGH-Z I
CCS
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING
V
CC
Power Supply Voltage -0.3V to +7.0V
V
IN
, V
I/O
Input, Input/Output Voltage -0.3 to V
CC
+0.3V
T
STG
Storage Temperature -55°C to +125°C
T
OPR
Operating Temperature -40°C to +85°C
T
SOLDER
Soldering Temperature/Time IPC/JEDEC J-STD-020
CAPACITANCE (T
A
=
+25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
5 10 pF
Input/Output Capacitance C
I/O
5 12 pF
+5-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS (T
A
= -40°C to +85°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Power Supply Voltage V
CC
4.5 5.0 5.5 V
Input High Voltage V
IH
2.0 V
CC
+ 0.3 V
Input Low Voltage V
IL
-0.3 0.8 V
Data Retention Voltage V
DR
2.0 5.5 V
DC CHARACTERISTICS (T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Leakage Current I
IL
0V £ V
IN
£ V
CC
± 0.1 µA
I/O Leakage Current I
LO
CE = V
IH
, 0V £ V
IO
£ V
CC
± 0.5 µA
Output High Current I
OH
V
OH
= 2.4V -1.0 mA
Output Low Current I
OL
V
OL
= 0.4V 4.0 mA
Standby Current I
CCS1
CE = 2.0V
0.3 mA
Standby Current I
CCS2
CE ³ V
CC
- 0.5V, t
A
=
+60°C
1 µA
Standby Current I
CCS2
CE ³ V
CC
- 0.5V, t
A
=
+25°C
100 nA
Operating Current I
CCO
CE = 0.8V, 200ns cycle
55 mA
DS2016
3 of 8
AC CHARACTERISTICS READ CYCLE (T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
DS2016-100
PARAMETER SYMBOL
MIN TYP MAX
UNITS NOTES
Read Cycle Time t
RC
100 ns
Access Time t
ACC
100 ns
OE to Output Valid
t
OE
50 ns
CE to Output Valid
t
CO
100 ns
CE or OE to Output
Active
t
COE
5 ns
Output High-Z from
Deselection
t
OD
5 35 ns
Output Hold from
Address Change
t
OH
5 ns
AC CHARACTERISTICS WRITE CYCLE (T
A
= -40°C to +85°C; V
CC
= 5V ±10%)
DS2016-100
PARAMETER SYMBOL
MIN TYP MAX
UNITS NOTES
Write Cycle Time t
WC
100 ns
Write Pulse Width t
WP
75 ns
Address Setup Time t
AW
0 ns
Write Recovery
Time
t
WR
10 ns
Output High-Z from
WE
t
ODW
35 ns
Output Active from
WE
t
OEW
5 ns
Data Setup Time t
DS
40 ns
Data Hold Time t
DH
0 ns
DATA RETENTION CHARACTERISTICS (T
A
= -40°C to +85°C)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Data Retention Supply
Voltage
V
DR
CE ³ V
CC
- 0.5V
2.0 5.5 V
Data Retention
Current at 5.5V
I
CCR1
CE ³ V
CC
- 0.5V
0.1* 1 µA
Data Retention
Current at 2.0V
I
CCR2
CE ³ V
CC
- 0.5V
50* 750 nA
Chip Deselect to Data
Retention
t
CDR
0 µs
Recovery Time t
R
2 ms
* Typical values are at +25°C
P1-P3P4-P6P7-P8

DS2016-100+

Mfr. #:
Buy DS2016-100+
Manufacturer:
Maxim Integrated
Description:
SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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