DS2016
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TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1
SEE NOTE 8
NOTES:
1) WE is high for read cycles.
2) OE = V
IH
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3) t
WP
is specified as the logical AND of CE and WE . t
WP
is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4) t
DH
and t
DS
are measured from the earlier of CE or WE going high.
5) If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high impedance state.
6) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state.
7) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state.
8) If the V
IH
level of CE is 2.0V during the period that V
CC
voltage is going down from 4.5V to 2.7V,
I
CCS1
current flows.
9) The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show
two tested and guaranteed points of operation. For operation between 4.5V and 3.5V, use the
composite worst case characteristics from both 5V and 3V operation for design purposes.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0V - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
