+125
O
C
TSTG
Symbol
Typ
Parameter
Conditions Min
Max
Unit
Forward voltage
IF = 10mA
VF V
0.45
Reverse current
Capacitance between terminals
VR = 10V
f = 1 MHz, and 10 VDC reverse voltage
IR
CT
uA
pF
6
1
CDBER0140R
QW-A1089
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRRM
Average forward rectified current
Reverse voltage
Repetitive Peak reverse voltage
Forward current,surge peak
Symbol
Parameter
Conditions
Min
Max
Unit
V
V
mA
100
40
45
Tj
Storage temperature
Junction temperature
O
C
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
1
A
REV:C
0.053(1.35)
0.045(1.15)
0.034(0.85)
0.026(0.65)
0.030(0.75)
0.024(0.60)
Dimensions in inches and (millimeter)
0.022(0.55) Typ.
0.016(0.40) Typ.
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0503/SOD-723F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.002 gram(approx.).
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Io = 100 mA
VR = 40 Volts
RoHS Device
0503/SOD-723F
Company reserves the right to improve product design , functions and reliability without notice.
