VLZ-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 06-May-14
4
Document Number: 81759
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 4 - Temperature Coefficient of V
Z
vs. Z-Voltage
VLZ39B 35.36 37.19 5 0.5 0.04 33.6 85 250
VLZ39C 36 37.85 5 0.5 0.04 34.2 85 250
VLZ39D 36.63 38.52 5 0.5 0.04 34.8 85 250
VLZ39E 37.36 39.29 5 0.5 0.04 35.5 85 250
VLZ39F 38.14 40.11 5 0.5 0.04 36.2 85 250
VLZ39G 38.94 40.8 5 0.5 0.04 37 85 250
VLZ43 40 45 5 - 0.04 38 90 -
VLZ47 44 49 5 - 0.04 41.8 90 -
VLZ51 48 54 5 - 0.04 45.6 100 -
VLZ56 53 60 5 - 0.04 50.4 100 -
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE RANGE TEST CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC RESISTANCE
f = 1 kHz
V
Z
at I
ZT1
I
ZT1
I
ZT2
I
R
at V
R
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
V mA μA V
MIN. MAX. MAX. MAX. MAX.
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
I
Z
= 5 mA
0
5
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
T
j
- Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
2 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
- 4 x 10
-4
/K
- 2 x 10
-4
/K
- 5
0
5
10
15
V
Z
- Z-Voltage (V)
95 9600
I
Z
= 5 mA
0 10 203040 50
TK
VZ
- Temperature Coefficient
of V
Z
(10
-4
/K)