IS31AP2145A
Integrated Silicon Solution, Inc. – www.issi.com 5
Rev.A, 11/20/2011
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
Supply voltage, V
DD
-0.3V ~ +6.0V
Voltage at any input pin
-0.3V ~ V
DD
+0.3V
Junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range 40°C ~ +85°C
ESD (HBM) 7kV
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
A
= -40°C ~ +85°C, V
DD
= 2.7V ~ 5.5V, unless otherwise noted. Typical value are V
DD
= 3.6V, T
A
= +25°C.
Symbol Parameter Condition Min. Typ. Max. Unit
V
DD
Supply voltage 2.7 5.5 V
I
DD
Quiescent current 2 mA
I
SD
Shutdown current V
CTRL
= 0V 0.1 A
f
SW
Switching frequency V
DD
= 2.7V ~ 5.5V 300 kHz
Gain Audio input gain 18 dB
AGC Characteristics
V
AGC1
AGC1 mode setting threshold voltage 1.4 V
DD
V
V
AGC2
AGC2 mode setting threshold voltage 0.64 1.05 V
V
OFF
AGC OFF mode setting threshold voltage 0.36 0.6 V
V
SD
Shutdown mode setting threshold voltage 0 0.14 V
t
AT1
Attack time 1 45 ms
t
RT1
Release time 1 2.6 s
t
AT2
Attack time 2 10 ms
t
RT2
Release time 1.2 s
A
MAX
Maximum attenuation gain -10 dB
