© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 8
1 Publication Order Number:
MPSA42/D
MPSA42, MPSA43
High Voltage Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPSA43
MPSA42
V
CEO
200
300
Vdc
Collector−Base Voltage
MPSA43
MPSA42
V
CBO
200
300
Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x = 2 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
MPS
A4x
AYWWG
G
TO−92
(TO−226AA)
CASE 29−11
1
2
3
1
2
BENT LEADSTRAIGHT LEAD
3
