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PTFB213208FV-V2-R2

P1-P3P4-P6P7-P9P10-P12P13-P13
PTFB213208FV
Confidential, Limited Internal Distribution
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY 1 of 13 Rev. 02, 2012-07-03
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 2110 – 2170 MHz
Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use
in multi-standard cellular power amplifi er applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
fl ange. Manufactured with Infi neon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2140 MHz, 28 V
(combined outputs)
- Output power @ P
1dB
= 343 W
- Effi ciency = 54%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance,
2140 MHz, 28 V
- Output power = 50 dBm avg
- Gain = 17 dB
- Effi ciency = 32%
• Capable of handling 10:1 VSWR @ 28 V, 320 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infi neon test fi xture)
V
DD
= 28 V, I
DQ
= 2.6 A, P
OUT
= 85 W average, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.75 17.0 — dB
Drain Efficiency
ηD — 32 — %
Adjacent Channel Power Ratio ACPR — –35 –29.5 dBc
PTFB213208FV
Package H-34275G-6/2
0
5
10
15
20
25
30
35
-60
-55
-50
-45
-40
-35
-30
-25
36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
IMD3, ACPR (dBc)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
IMD Up
b213208fv-gr 16
Efficiency
ACPR
IMD Low
PTFB213208FV
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 2 of 13 Rev. 02, 2012-07-03
DC Characteristics (both sides)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1.0 µA
V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.05 — Ω
Operating Gate Voltage V
DS
= 28 V, I
DQ
= 2.6 A V
GS
2.3 2.8 3.3 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–6 to +10 V
Junction Temperature T
J
200 °C
Storage Temperature Range T
STG
–40 to +150 °C
Thermal Resistance (T
CASE
= 70°C, 200 W CW) R
θJC
0.20 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFB213208FV V1 PTFB213208FVV1XWSA1 H-34275G-6/2, ceramic open-cavity, push-pull earless Tray
PTFB213208FV V1 R250 PTFB213208FVV1R250XTMA1 H-34275G-6/2, ceramic open-cavity, push-pull earless Tape & Reel, 250 pcs
Lead connections for PTFB213208SV
Pin Description
V1 V
DD
device 1
V2 V
DD
device 2
D1 Drain device 1
D2 Drain device 2
G1 Gate device 1
G2 Gate device 2
S Source (fl ange)
Pinout Diagram (top view)
V2
G1 G2
D2D1
V1
H-37275G-6-2_pd_08-30-2011
S = flange
S (fl ange)
Data Sheet – DRAFT ONLY 3 of 13 Rev. 02, 2012-07-03
PTFB213208FV
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
-40
-30
-20
-10
0
0
10
20
30
40
2060 2100 2140 2180 2220
IReturn Loss (dB), ACP Up (dBc)
Gain & PAR (dB), Efficiency (%)
Frequency (MHz)
Single-carrier WCDMA 3GPP
Broadband Performance
V
DD
= 28 V, I
DQ
= 2.7 A, P
OUT
= 100 W
Return Loss
Efficiency
Gain
b213208fv-gr4
PAR
A
CP U
p
0
10
20
30
40
15
16
17
18
19
36 38 40 42 44 46 48 50 52
Efficiency (%)
Gain (dB)
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Gain
Efficienc
y
b213208fv-gr 5
0
20
40
60
12
16
20
24
%
), ACP (dBc)
)
, Gain (dB)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28V, I
DQ
= 2.7 A, ƒ = 2170 MHz
3GPP WCDMA signal,
PAR = 7.5 dB, 3.84 MHz BW
Gain
Efficiency
-60
-40
-20
0
4
8
35 40 45 50 55
Efficiency (
%
PAR (dB
)
Output Power Avg(dBm)
PAR
@
0.01% CCDF
ACP Low
b213208fv-gr2
0
10
20
30
40
50
-60
-50
-40
-30
-20
-10
35 40 45 50 55
Drain Efficiency (%)
ACP Up & Low (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5,
BW = 3.84 MHz
ACP Up
Efficiency
ACP Low
b213208fv-gr3
P1-P3P4-P6P7-P9P10-P12P13-P13

PTFB213208FV-V2-R2

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Description:
RF MOSFET Transistors RF LDMOS FET
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