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BAT30F3

P1-P3P4-P6P7-P9P10-P10
October 2010 Doc ID 16915 Rev 2 1/10
10
BAT30F3
Small signal Schottky diode
Features
■ very low conduction losses
■ negligible switching losses
■ low capacitance diode
■ Flip Chip, 2-bump package
Complies with the following standards
■ IEC 61000-4-2 level 1:
– ±2kV (air discharge)
– ±2kV (contact discharge)
Description
The BAT30F3 is a Schottky diode in a 2-bump,
Flip-Chip package.
This device is specially suited for switching mode
applications needing a low forward voltage drop
diode.
The electrical parameters are guaranteed across
the operating temperature range
(- 30 °C to 85 °C).
Figure 1. Pin configuration (bump side)
Figure 2. Schematic
Flip Chip
(2 bumps)
1
A
B
1
A
B
www.st.com
Characteristics BAT30F3
2/10 Doc ID 16915 Rev 2
1 Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage:
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
±2
±2
kV
V
RRM
Repetitive peak reverse voltage 20 V
T
stg
Storage temperature range
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-55 to +150 °C
T
op
Operating junction temperature range -30 to +85 °C
Table 2. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage current
25 °C
V
R
= 6 V - - 2
µA
V
R
= 20 V - - 6
55 °C
V
R
= 6 V - - 20
V
R
= 20 V - - 55
85 °C
V
R
= 6 V - - 145
V
R
= 20 V - - 360
V
F
Forward voltage drop
25 °C
I
F
= 0.1 mA - - 200
mV
I
F
= 1 mA - - 270
I
F
= 10 mA - - 340
I
F
= 100 mA - - 440
I
F
= 200 mA - - 500
I
F
= 300 mA - - 560
- 30 °C
I
F
= 0.1 mA - - 300
I
F
= 1 mA - - 355
I
F
= 10 mA - - 415
I
F
= 100 mA - - 495
I
F
= 200 mA - - 545
I
F
= 300 mA - - 600
dPtot
dTj
<
1
Rth(j-a)
BAT30F3 Characteristics
Doc ID 16915 Rev 2 3/10
Figure 3. Leakage current versus reverse
applied voltage (typical values)
Figure 4. Forward voltage drop versus
forward current (typical values,
positive temperatures)
I (µA)
R
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 5 10 15 20 25 30
Tj=85°C (Maximum specified values)
T
j
=-30°C
T
j
=25°C
T
j
=85°C
T
j
=55°C
T
j
=0°C
V (V)
R
1.E-04
1.E-02
1.E-01
1.E+00
1.E-03
0.0 0.1 0.2 0.3 0.4 0.60.5 0.7
I (A)
FM
V (V)
FM
T
j
= 55 °C
T
j
= 85 °C
T
j
= 25 °C
Figure 5. Forward voltage drop versus
forward current (typical values,
negative temperatures)
Figure 6. Relative variation of reverse
leakage current versus junction
temperature (typical values)
I (A)
FM
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0.2 0.3 0.4 0.5 0.6 0.7
Tj=-30°C (Maximum specified values)
T
j
=-20°CT
j
=-20°C
T
j
=-10°CT
j
=-10°C
T
j
=-30°CT
j
=-30°C
V (V)
FM
1.E-02
1.E+00
1.E+01
1.E-01
1.E+02
T
j
(°C)
-30 -20 0 20 40 60 80-10 10
30
50 70 90
I[T
j
] / I [T
j
= 25 °C]
RR
P1-P3P4-P6P7-P9P10-P10

BAT30F3

Mfr. #:
Buy BAT30F3
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Schottky Barrier, Signal Schottky
Lifecycle:
New from this manufacturer.
Delivery:
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