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SI8817DB-T2-E1

P1-P3P4-P6P7-P9
Si8817DB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
1
Document Number: 62759
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
Marking Code: xx = AF
xxx = Date/Lot traceability code
Ordering Information:
Si8817DB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Small 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switches and chargers switches
• Battery management
•DC/DC converters
• For smart phones and tablet PCs
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) MAX. I
D
(A)
a, e
Q
g
(Typ.)
-20
0.076 at V
GS
= -4.5 V -2.9
7.5 nC
0.100 at V
GS
= -2.5 V -2.5
0.145 at V
GS
= -1.8 V -2.1
0.320 at V
GS
= -1.5 V -0.5
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
-2.9
a
A
T
A
= 70 °C -2.3
a
T
A
= 25 °C -2.1
b
T
A
= 70 °C -1.7
b
Pulsed Drain Current (t = 300 μs) I
DM
-15
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
-0.7
a
T
A
= 25 °C -0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150
°C
Package Reflow Conditions
c
VPR 260
IR/Convection 260
Si8817DB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
2
Document Number: 62759
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 185 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 330 °C/W.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, b
t = 5 s
R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
c, d
t = 5 s 200 260
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -20 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= -250 μA
--12-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
-2.5-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.4 - -1 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -20 V, V
GS
= 0 V - - -1
μA
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C - - -10
On-State Drain Current
a
I
D(on)
V
DS
≤ -5 V, V
GS
= -4.5 V -5 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -4.5 V, I
D
= -1 A - 0.061 0.076
Ω
V
GS
= -2.5 V, I
D
= -1 A - 0.080 0.100
V
GS
= -1.8 V, I
D
= -0.5 A - 0.110 0.145
V
GS
= -1.5 V, I
D
= -0.5 A - 0.165 0.320
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -1 A - 5 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
- 615 -
pFOutput Capacitance C
oss
-90-
Reverse Transfer Capacitance C
rss
-75-
Total Gate Charge Q
g
V
DS
= -10 V, V
GS
= -8 V, I
D
= -1 A - 12.5 19
nC
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1 A
-7.512
Gate-Source Charge Q
gs
-1-
Gate-Drain Charge Q
gd
-1.9-
Gate Resistance R
g
V
GS
= -0.1 V, f = 1 MHz - 14 - Ω
Turn-On Delay Time t
d(on)
V
DD
= -10 V, R
L
= 10 Ω
I
D
≅ -1 A, V
GEN
= -4.5 V, R
g
= 1 Ω
-2040
ns
Rise Time t
r
-2040
Turn-Off Delay Time t
d(off)
-52100
Fall Time t
f
-2245
Turn-On Delay Time t
d(on)
V
DD
= -10 V, R
L
= 10 Ω
I
D
≅ -1 A, V
GEN
= -8 V, R
g
= 1 Ω
-615
Rise Time t
r
-1020
Turn-Off Delay Time t
d(off)
-60120
Fall Time t
f
-2345
Si8817DB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
3
Document Number: 62759
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I
S
T
A
= 25 °C - - -0.7
A
Pulse Diode Forward Current I
SM
---15
Body Diode Voltage V
SD
I
S
= -1 A, V
GS
= 0 V - -0.75 -1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= -1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-3060ns
Body Diode Reverse Recovery Charge Q
rr
-1430nC
Reverse Recovery Fall Time t
a
-13-
ns
Reverse Recovery Rise Time t
b
-17-
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9

SI8817DB-T2-E1

Mfr. #:
Buy SI8817DB-T2-E1
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V MICROFOOT
Lifecycle:
New from this manufacturer.
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