MT41K512M8RH-125 V:E

Addendum
DDR3L SDRAM
MT41K512M8RH-125 V:E MT41K256M16HA-125 V:E
MT41K512M8DA-107 V:P MT41K256M16TW-107 V:P
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
SDRAM data sheet specifications when running in
1.5V compatible mode.
Features
V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
Supports DDR3L devices to be backward com-
patible in 1.5V applications
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable posted CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 0°C to +95°C
64ms, 8192-cycle refresh at 0°C to +85°C
32ms at +85°C to +95°C
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options Marking
Configuration
512 Meg x 8 512M8
256 Meg x 16 256M16
FBGA package (Pb-free) – x8
78-ball (9mm x 10.5mm) Rev. E RH
78-ball (8mm x 10.5mm) Rev. P DA
FBGA package (Pb-free) – x16
96-ball (9mm x 14mm) Rev. E HA
96-ball (8mm x 14mm) Rev. P TW
Timing – cycle time
1.071ns @ CL = 13 (DDR3-1866) -107
1.25ns @ CL = 11 (DDR3-1600) -125
Special options
Visual inspection V
Operating temperature
Commercial (0°C T
C
+95°C) None
Industrial (–40°C T
C
+95°C) IT
Revision :E/:P
Table 1: Key Timing Parameters
Speed Grade Data Rate (MT/s) Target
t
RCD-
t
RP-CL
t
RCD (ns)
t
RP (ns) CL (ns)
-107
1
1866 13-13-13 13.91 13.91 13.91
-125 1600 11-11-11 13.75 13.75 13.75
Note:
1. Backward compatible to 1600, CL = 11 (-125).
4Gb: x8, x16 DDR3L SDRAM Addendum
Description
09005aef858c7838
4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 512 Meg x 8 256 Meg x 16
Configuration 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks
Refresh count 8K 8K
Row address 64K (A[15:0]) 32K (A[14:0])
Bank address 8 (BA[2:0]) 8 (BA[2:0])
Column address 1K (A[9:0]) 1K (A[9:0])
Page size 1KB 2KB
Figure 1: DDR3L Part Numbers
Example Part Number: MT41K512M8RH-125 V:E
Configuration
512 Meg x 8
256 Meg x 16
512M8
256M16
-
Configuration
MT41K
Package
Speed
Revision
Revision
:E/:P
:
Commercial
Industrial temperature
{
None
IT
Package
Mark
Mark
Rev.
78-ball 9mm x 10.5mm FBGA
RHE
78-ball 8mm x 10.5mm FBGA
DAP
96-ball 9mm x 14mm FBGA
HAE
96-ball 8mm x 14mm FBGA
TWP
Speed Grade
t
CK = 1.071ns, CL = 13
t
CK = 1.25ns, CL = 11
-107
-125
Temperature
Visual inspection V
Special Options
Mark
Mark
Mark
Note:
1. Not all options listed can be combined to define an offered product. Use the part catalog search on
http://www.micron.com for available offerings.
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
4Gb: x8, x16 DDR3L SDRAM Addendum
Description
09005aef858c7838
4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Revision History
Rev. C – 07/16
Added DA and TW package codes
Added :P Revision code
Removed unused mark options
Rev. B – 04/15
Removed Micron Confidential and Proprietary mark
Rev. A – 02/14
Initial release; based on 4Gb: x4, x8, x16 DDR3L SDRAM, Rev I 09/13 data sheet
(09005aef84780270)
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
4Gb: x8, x16 DDR3L SDRAM Addendum
Revision History
09005aef858c7838
4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

MT41K512M8RH-125 V:E

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 4G PARALLEL 78FBGA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union