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FS15R06VE3B2BOMA1

P1-P3P4-P6P7-P8
1
TechnischeInformation/TechnicalInformation
FS15R06VE3_B2
IGBT-Module
IGBT-modules
preparedby:DPK
approvedby:RK
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C V
CES
600 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
I
C nom
I
C
15
22
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
30 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 175 P
tot
65,0 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 15 A, V
GE
= 15 V
I
C
= 15 A, V
GE
= 15 V
I
C
= 15 A, V
GE
= 15 V
V
CE sat
1,55
1,70
1,80
2,00
V
V
V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 0,20 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,9 5,8 6,5 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V Q
G
0,15 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
0,0 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
0,83 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
0,026 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 600 V, V
GE
= 0 V, T
vj
= 25°C I
CES
1,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 15 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 22 Ω
t
d on
0,014
0,014
0,014
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 15 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 22 Ω
t
r
0,011
0,015
0,015
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 15 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 22 Ω
t
d off
0,11
0,13
0,14
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 15 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 22 Ω
t
f
0,085
0,11
0,12
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 15 A, V
CE
= 300 V, L
S
= 50 nH
V
GE
= ±15 V
R
Gon
= 22 Ω
E
on
0,25
0,32
0,36
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 15 A, V
CE
= 300 V, L
S
= 50 nH
V
GE
= ±15 V
R
Goff
= 22 Ω
E
off
0,34
0,44
0,46
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
100
75
A
A
T
vj
= 25°C
T
vj
= 150°C
t
P
≤ 8 µs,
t
P
≤ 6 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
2,10 2,30 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,90 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 150 °C
2
TechnischeInformation/TechnicalInformation
FS15R06VE3_B2
IGBT-Module
IGBT-modules
preparedby:DPK
approvedby:RK
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
T
vj
= 25°C V
RRM
600 V
Dauergleichstrom
ContinuousDCforwardcurrent
I
F
15 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
t
P
= 1 ms I
FRM
30 A
Grenzlastintegral
I²t-value
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
I²t
22,5
20,5
A²s
A²s
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Durchlassspannung
Forwardvoltage
I
F
= 15 A, V
GE
= 0 V
I
F
= 15 A, V
GE
= 0 V
I
F
= 15 A, V
GE
= 0 V
V
F
1,60
1,55
1,50
2,05
V
V
V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Rückstromspitze
Peakreverserecoverycurrent
I
F
= 15 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
I
RM
23,0
25,0
26,0
A
A
A
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Sperrverzögerungsladung
Recoveredcharge
I
F
= 15 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
Q
r
0,80
1,40
1,70
µC
µC
µC
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
AbschaltenergieproPuls
Reverserecoveryenergy
I
F
= 15 A, - di
F
/dt = 1600 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
E
rec
0,16
0,28
0,37
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode R
thJC
3,10 3,40 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proDiode/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
1,20 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 150 °C
NTC-Widerstand/NTC-Thermistor
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Nennwiderstand
Ratedresistance
T
C
= 25°C R
25
5,00 kΩ
AbweichungvonR100
DeviationofR100
T
C
= 100°C, R
100
= 493 Ω ∆R/R -5 5 %
Verlustleistung
Powerdissipation
T
C
= 25°C P
25
20,0 mW
B-Wert
B-value
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))] B
25/50
3375 K
B-Wert
B-value
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))] B
25/80
t.b.d. K
B-Wert
B-value
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))] B
25/100
t.b.d. K
AngabengemäßgültigerApplicationNote.
Specificationaccordingtothevalidapplicationnote.
3
TechnischeInformation/TechnicalInformation
FS15R06VE3_B2
IGBT-Module
IGBT-modules
preparedby:DPK
approvedby:RK
dateofpublication:2013-10-03
revision:2.0
VorläufigeDaten
PreliminaryData
Modul/Module
Isolations-Prüfspannung
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min. V
ISOL
2,5 kV
InnereIsolation
Internalisolation
Basisisolierung(Schutzklasse1,EN61140)
basicinsulation(class1,IEC61140)
Al
2
O
3
Kriechstrecke
Creepagedistance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
5,0
5,0
mm
Luftstrecke
Clearance
Kontakt-Kühlkörper/terminaltoheatsink
Kontakt-Kontakt/terminaltoterminal
3,2
3,2
mm
VergleichszahlderKriechwegbildung
Comperativetrackingindex
CTI > 225
min. typ. max.
Modulstreuinduktivität
Strayinductancemodule
L
sCE
25 nH
Modulleitungswiderstand,Anschlüsse-
Chip
Moduleleadresistance,terminals-chip
T
C
=25°C,proSchalter/perswitch R
CC'+EE'
9,50 mΩ
Lagertemperatur
Storagetemperature
T
stg
-40 125 °C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F 30 - 50 N
Gewicht
Weight
G 10 g
P1-P3P4-P6P7-P8

FS15R06VE3B2BOMA1

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Buy FS15R06VE3B2BOMA1
Manufacturer:
Infineon Technologies
Description:
IGBT MODULE VCES 600V 15A
Lifecycle:
New from this manufacturer.
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