©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
KSK30
Silicon N-channel Junction Fet
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
I
DSS
Classification
Symbol Parameter Ratings Units
V
GDS
Gate-Drain Voltage -50 V
I
G
Gate-Current 10 mA
P
D
Collector Dissipation 100 mW
T
J
Junction Temperature 125 °C
T
STG
Storage Temperature -55 ~ 125 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GDS
Gate-Drain Breakdown Voltage V
DS
=0, I
G
= -100µA-50 V
I
GSS
Gate Leak Current V
GS
= -30V, V
DS
=0 -1 nA
I
DSS
Drain Leak Current V
DS
=10V, V
GS
=0 0.3 6.5 mA
V
GS
(off) Gate-Source Voltage V
DS
=10V, I
D
=0.1µA -0.4 -5 V
Y
FS
Forward Transfer Admittance V
DS
=10V, V
GS
=0, f=1KHz 1.2 mS
C
iss
Input Capacitance V
DS
=0, V
GS
=0, f=1MHz 8.2 pF
C
rss
Feedback Capacitance V
GD
=10V, V
DS
=0
f=1MHz 2.6 pF
NF Noise Figure V
DS
=15V, V
GS
=0
R
G
=100KΩ
f=120Hz
0.5 5 dB
Classification R O Y G
I
DSS
(mA) 0.30 ~ 0.75 0.60 ~ 1.40 1.20 ~ 3.00 2.60 ~ 6.50
KSK30
Low Noise PRE-AMP. Use
• High Input Impedance: I
GSS
=1nA (MAX)
• Low Noise: NF=0.5dB (TYP)
• High Voltage: V
GDS
= -50V
1. Source 2. Gate 3. Drain
TO-92
1
