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IRF6718L2TRPBF
P1-P3
P4-P6
P7-P9
P10-P10
IRF6718L2TR/TR1PbF
www.irf.com
7
Fig 18a.
Gate Charge Test Circuit
Fig 18b.
Gate Charge Waveform
Fig 19b.
Unclamped Inductive Waveforms
Fig 19a.
Unclamped Inductive Test Circuit
Fig 20b.
Switching Time Waveforms
Fig 20a.
Switching Time Test Circuit
1K
VCC
DUT
0
L
S
20K
Vd
s
Vg
s
Id
Vgs(t
h)
Qgs1
Qgs2
Qg
d
Qgodr
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
t
p
V
(BR
)D
SS
I
AS
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
V
DS
V
GS
90%
10%
t
d(off)
t
d(on)
t
f
t
r
IRF6718L2TR/TR1PbF
8
www.irf.com
Fig 19.
Diode
Reverse Recovery
Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Wavef
orm
D.U.T
. V
DS
Wavef
orm
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V for
Logic Level
Devices
*
Inductor
Current
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
•
di/dt controlled
by
R
G
•
Driver same type
as D.U.T.
•
I
SD
controlled
by Duty
Factor "D"
•
D.U.T. - Device
Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T
DirectFET
®
Board
Footprint,
L6
(Large
Size
Can).
Please see
AN-1035 for DirectFET
assembly details and stencil and substrate design recommendations
G = G
ATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
SSS
S
S
S
G
IRF6718L2TR/TR1PbF
www.irf.com
9
DirectFET
®
Outline
Dimension,
L6
Outline
(LargeSize
Can).
Please see
AN-1035 for DirectFET
assembly details and stencil and substrate design recommendations
DirectFET
®
Part Marking
LOGO
DA
TE CODE
Line above the last character of
the date code indicates "Lead-Free"
BATCH NUMBER
PART NUMBER
GA
TE MA
RK
ING
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.017
0.030
0.017
0.058
0.106
0.0274
0.0031
0.007
IM
PERIA
L
METRI
C
DIME
NSI
ONS
MIN
0.356
0.270
0.232
0.022
0.023
0.046
0.015
0.029
0.015
0.053
0.099
0.0235
0.0008
0.003
COD
E
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MI
N
9.05
6.85
5.90
0.55
0.58
1.18
0.98
0.73
0.38
1.34
2.
5
2
0.616
0.020
0.09
MAX
9.
1
5
7.
1
0
6.00
0.
6
5
0.
6
2
1.22
1.02
0.
7
7
0.
4
2
1.47
2.69
0.676
0.080
0.
1
8
P1-P3
P4-P6
P7-P9
P10-P10
IRF6718L2TRPBF
Mfr. #:
Buy IRF6718L2TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64nC
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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