NLX3G14FMUTCG

© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 3
1 Publication Order Number:
NLX3G14/D
NLX3G14
Triple Schmitt-Trigger
Inverter
The NLX3G14 MiniGatet is an advanced high−speed CMOS
triple Schmitt−trigger inverter in ultra−small footprint.
The NLX3G14 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
The NLX3G14 can be used to enhance noise immunity or to square
up slowly changing waveforms.
Features
Designed for 1.65 V to 5.5 V V
CC
Operation
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
24 Balanced Output Source and Sink Capability
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
IN A2
OUT Y2
1
OUT Y2
IN A1
GND
OUT Y1
IN A2
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
V
CC
IN A1
OUT Y1
1
1
2
3
4
8
7
6
5
OUT Y3
IN A3
IN A3
OUT Y3
1
FUNCTION TABLE
L
H
AY
H
L
PIN ASSIGNMENT
1
2
3IN A2
IN A1
OUT Y
3
4
5 OUT Y
2
GND
6 IN A3
7 OUT Y1
8V
CC
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
F, AC, 2 = Specific Device Code
M = Date Code
G = Pb−Free Package
UDFN8
1.45 x 1.0
CASE 517BZ
UDFN8
1.6 x 1.0
CASE 517BY
UDFN8
1.95 x 1.0
CASE 517CA
X M
1
2 M
1
X M
1
NLX3G14
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −50 mA
I
OK
DC Output Diode Current V
OUT
< GND ±50 mA
I
O
DC Output Source/Sink Current ±50 mA
I
CC
DC Supply Current Per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 2.5 V ± 0.2 V
V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
0
No Limit
No Limit
No Limit
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NLX3G14
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
T+
Positive
Threshold
Voltage
1.65
2.3
2.7
3.0
3.0
4.5
0.6
1.0
1.2
1.3
1.9
2.2
1.0
1.5
1.7
1.9
2.7
3.3
1.4
1.8
2.0
2.2
3.1
3.6
0.6
1.0
1.2
1.3
1.9
2.2
1.4
1.8
2.0
2.2
3.1
3.6
0.6
1.0
1.2
1.3
1.9
2.2
1.4
1.8
2.0
2.2
3.1
3.6
V
V
T−
Negative
Threshold
Voltage
1.65
2.3
2.7
3.0
3.0
4.5
0.2
0.4
0.5
0.6
1.0
1.2
0.5
0.75
0.87
1.0
1.5
1.9
0.8
1.15
1.4
1.5
2.0
2.3
0.2
0.4
0.5
0.6
1.0
1.2
0.8
1.15
1.4
1.5
2.0
2.3
0.2
0.4
0.5
0.6
1.0
1.2
0.8
1.15
1.4
1.5
2.0
2.3
V
V
H
Hysteresis
Voltage
1.65
2.3
2.7
3.0
3.0
4.5
0.1
0.25
0.3
0.4
0.6
0.7
0.48
0.75
0.83
0.93
1.2
1.4
0.9
1.1
1.15
1.2
1.5
1.7
0.1
0.25
0.3
0.4
0.6
0.7
0.9
1.1
1.15
1.2
1.5
1.7
0.1
0.25
0.3
0.4
0.6
0.7
0.9
1.1
1.15
1.2
1.5
1.7
V
V
OH
Minimum
High−Level
Output
Voltage
V
IN
v V
T−MIN
I
OH
= −100 mA
1.65
to 5.5
V
CC
0.1
V
CC
V
CC
0.1
V
CC
0.1
V
V
IN
v V
T−MIN
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
2.7
3.0
3.0
4.5
1.29
1.9
2.2
2.4
2.3
3.8
1.52
2.1
2.4
2.7
2.5
4.0
1.29
1.9
2.2
2.4
2.3
3.8
1.29
1.8
2.1
2.3
2.2
3.7
V
OL
Maximum
Low−Level
Output
Voltage
V
IN
w V
T+MAX
I
OL
= 100 mA
1.65
to 5.5
0 0.1 0.1 0.1
V
V
IN
w V
T+MAX
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 12 mA
I
OH
= 16 mA
I
OH
= 24 mA
I
OH
= 32 mA
1.65
2.3
2.7
3.0
3.0
4.5
0.08
0.2
0.22
0.28
0.38
0.42
0.24
0.3
0.4
0.4
0.55
0.55
0.24
0.3
0.4
0.4
0.55
0.55
0.24
0.4
0.5
0.5
0.55
0.65
I
IN
Input
Leakage
Current
0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
OFF
Power−Off
Output
Leakage
Current
V
OUT
= 5.5 V 0 1.0 10 10
mA
I
CC
Quiescent
Supply
Current
0 v V
IN
v V
CC
5.5 1.0 10 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NLX3G14FMUTCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters TRIPLE INVERTER SCHM
Lifecycle:
New from this manufacturer.
Delivery:
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