2SC3503FSTU Datasheet 2SC3503ESTU, 2SC3503FSTU, 2SC3503CSTU | P1-P3

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor

2SC3503/KSC3503 Rev. A1 1

March 2008

2SC3503/KSC3503

NPN Epitaxial Silicon Transistor

Applications

• Audio, Voltage Amplifier and Current Source

• CRT Display, Video Output

• General Purpose Amplifier

Features

• High Voltage : V

CEO

= 300V

• Low Reverse Transfer Capacitance : C

re

= 1.8pF at V

CB

= 30V

• Excellent Gain Linearity for low THD

• High Frequency: 150MHz

• Full thermal and electrical Spice models are available

• Complement to 2SA1381/KSA1381.

Absolute Maximum Ratings* T

a

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T

a

=25°C unless otherwise noted

* Device mounted on minimum pad size

h

FE

Classification

Symbol Parameter Ratings Units

BV

CBO

Collector-Base Voltage 300 V

BV

CEO

Collector-Emitter Voltage 300 V

BV

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current(DC) 100 mA

I

CP

Collector Current(Pulse) 200 mA

P

C

Total Device Dissipation, T

C

=25°C

T

C

=125°C

7

1.2

W

T

J

, T

STG

Junction and Storage Temperature - 55 ~ +150 °C

Symbol Parameter Max. Units

R

θJC

Thermal Resistance, Junction to Case 17.8 °C/W

Classification

CDEF

h

FE

40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320

1

TO-126

1. Emitter 2.Collector 3.Base

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor

2SC3503/KSC3503 Rev. A1 2

Electrical Characteristics* T

a

=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Ordering Information

* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.

2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 10µA, I

E

= 0 300 V

BV

CEO

Collecto- Emitter Breakdown Voltage I

C

= 1mA, I

B

= 0 300 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 10µA, I

C

= 0 5 V

I

CBO

Collector Cut-off Current V

CB

= 200V, I

E

= 0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

= 4V, I

C

= 0 0.1 µA

h

FE

DC Current Gain V

CE

= 10V, I

C

= 10mA 40 320

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 20mA, I

B

= 2mA 0.6 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 20mA, I

B

= 2mA 1 V

f

T

Current Gain Bandwidth Product V

CE

= 30V, I

C

= 10mA 150 MHz

C

ob

Output Capacitance V

CB

= 30V, f = 1MHz 2.6 pF

C

re

Reverse Transfer Capacitance V

CB

= 30V, f = 1MHz 1.8 pF

Part Number* Marking Package Packing Method Remarks

2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade

2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade

2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade

2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade

KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade

KSC3503DSTU C3503D TO-126 TUBE hFE1 D grade

KSC3503ESTU C3503E TO-126 TUBE hFE1 E grade

KSC3503FSTU C3503F TO-126 TUBE hFE1 F grade

2SC3503/KSC3503 — NPN Epitaxial Silicon Transistor

2SC3503/KSC3503 Rev. A1 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. Static Characteristic

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance

0246810

0

4

8

12

16

20

I

B

=

1

2

0

µ

A

I

B

=

1

0

µ

A

I

B

=

8

0

µ

A

I

B

=

6

0

µ

A

I

B

=

4

0

µ

A

I

B

=

2

0

µ

A

I

B

= 0

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 20406080100

0

2

4

6

8

10

I

B

=

6

0

µ

A

I

B

=

5

0

µ

A

I

B

=

4

0

µ

A

I

B

=

3

0

µ

A

I

B

=

2

0

µ

A

I

B

=

1

0

µ

A

I

B

= 0

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 100 1000

1

10

100

1000

V

CE

= 10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.00.20.40.60.81.01.2

0

20

40

60

80

100

120

140

160

V

CE

= 10V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

0.1 1 10 100 1000

0.1

1

10

100

f = 1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

2SC3503FSTU

2SC3503FSTU

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