74VHCT03AMTR

1/11December 2004
HIGH SPEED: t
PZ
= 3.9 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2 µA (MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 03
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (MAX.)
DESCRIPTION
The 74VHCT03A is an advanced high-speed
CMOS QUAD 2-INPUT OPEN DRAIN NAND
GATE fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This device
can also be used as a led driver and in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V since all inputs are
equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74VHCT03A
QUAD 2-INPUT OPEN DRAIN NAND GATE
Figure 1: Pin Connection And IEC Logic Symbols
Table 1: Order Codes
PACKAGE T & R
SOP 74VHCT03AMTR
TSSOP 74VHCT03ATTR
TSSOPSOP
Rev. 3
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
74VHCT03A
2/11
Figure 2: Input Equivalent Circuit Table 2: Pin Description
Table 3: Truth Table
Z : High Impedance
Table 4: Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 5: Recommended Operating Conditions
1) V
IN
from 0.8V to 2V
PIN N° SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
ABY
LLZ
LHZ
HLZ
HHL
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7.0 V
V
I
DC Input Voltage
-0.5 to +7.0 V
V
O
DC Output Voltage -0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 50 mA
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Symbol Parameter Value Unit
V
CC
Supply Voltage
4.5 to 5.5 V
V
I
Input Voltage
0 to 5.5 V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
dt/dv
Input Rise and Fall Time (see note 3) (V
CC
= 5.0 ± 0.5V)
0 to 20 ns/V
Obsolete Product(s) - Obsolete Product(s)
74VHCT03A
3/11
Table 6: DC Specifications
Table 7: AC Electrical Characteristics (Input t
r
= t
f
= 3ns)
(*) Voltage range is 5.0V ± 0.5V
Table 8: Capacitive Characteristics
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per gate)
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
4.5 to
5.5
222V
V
IL
Low Level Input
Voltage
4.5 to
5.5
0.8 0.8 0.8 V
V
OL
Low Level Output
Voltage
4.5
I
O
=50 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=8 mA
0.36 0.44 0.44
I
OZ
High Impedance
Output Leakage
Current
5.5
V
I
= V
IH
or V
IL
V
O
=
0V to 5.5V
±0.25 ± 2.5 ± 2.5 µA
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
± 0.1 ± 1.0 ± 1.0 µA
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
22020µA
+I
CC
Additional Worst
Case Supply
Current
5.5
One Input at 3.4V,
other input at V
CC
or GND
1.35 1.5 1.5 mA
Symbol Parameter
Test Condition Value
Unit
V
CC
(*)
(V)
C
L
(pF)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
t
PZL
Propagation Delay
Time
5.0 15 3.9 5.1 1.0 6.0 1.0 6.0
ns
5.0 50 4.4 5.7 1.0 6.6 1.0 6.6
t
PLZ
Propagation Delay
Time
5.0 50 7.5 9.8 1.0 11.3 1.0 11.3 ns
Symbol Parameter
Test Condition Value
Unit
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
C
IN
Input Capacitance
5.8 10 10 10 pF
C
OUT
Output
Capacitance
8.8 pF
C
PD
Power Dissipation
Capacitance
(note 1)
6pF

74VHCT03AMTR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Logic Gates Quad 2-Input NAND
Lifecycle:
New from this manufacturer.
Delivery:
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