STTH15AC06CT

This is information on a product in full production.
October 2013 DocID024884 Rev 1 1/11
11
STTH15AC06C
Turbo 2 ultrafast high voltage rectifier
Datasheet production data
Features
Ultrafast switching
Low reverse recovery current
Reduces switching and conduction losses
Low thermal resistance
insulated package TO-220FPAB:
Insulated voltage: 2500 V
DC
Description
The STTH15AC06C uses ST Turbo 2 600 V
technology and is suited as a boost diode in air
conditioning equipment for continuous mode
interleaved power factor correction.
The device is also intended for use as a
freewheeling diode in power supplies and other
power switching applications.
A1
K
K
A2
K
A1
A2
A1
K
A2
TO-220FPAB
STTH15AC06CFP
TO-220AB
STTH15AC06CT
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 7.5 A
V
RRM
600 V
t
rr
(max) 25 ns
V
F
(max) 1.5 V
T
j
(max) 175 °C
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Characteristics STTH15AC06C
2/11 DocID024884 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x I
F(AV)
+ 0.04 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current 15 A
I
F(AV)
Average forward current
Per diode 7.5
A
Per device 15
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
80 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (TO-220AB)
Per diode 2.8
°C/W
Total 1.7
Coupling (TO-220AB) 0.6
Junction to case (TO-220FPAB)
Per diode 6
Total 4.5
Coupling (TO-220FPAB) 3
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
1
µA
T
j
= 150 °C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 7.5A
1.9
V
T
j
= 150 °C 1.15 1.50
T
j
= 25 °C
I
F
= 15A
2.2
T
j
= 150 °C 1.4 1.8
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
DocID024884 Rev 1 3/11
STTH15AC06C Characteristics
Table 5. Dynamic characteristics (per diode)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A 25
ns
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = -50 A/µs 35 50
I
RM
Reverse recovery current T
j
= 125 °C
I
F
= 7.5 A, V
R
= 400 V,
dI
F
/dt = -100 A/µs
3.7 5 A
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 7.5 A, V
FR
= 1.5 V,
dI
F
/dt = 100 A/µs
100 ns
V
FP
Forward recovery voltage 2.5 V
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, per diode)
P
F(A V )
(
W)
0
2
4
6
8
10
12
14
16
0123456789
T
d
=tp/T
tp
d
= 0.05
d
= 0.1
d
= 0.2
d
= 0.5
d
= 1
I
F(A V )
(
A)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
T
T
j
j
= 150
= 25
°
°
C
C
I
F
(A)
V
F
(
V)
Figure 3. Forward voltage drop versus forward
current (maximum values, per diode)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-220AB)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
T
j
= 150
°
C
I
F
(A)
T
j
= 25
°
C
V
F
(
V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Z
t
h(j-c)
/R
TO
-
220AB
t(s)
P
Single pulse
t
h(j-c)

STTH15AC06CT

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast Recovery 1500V 12pF Diode
Lifecycle:
New from this manufacturer.
Delivery:
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