DocID024884 Rev 1 3/11
STTH15AC06C Characteristics
Table 5. Dynamic characteristics (per diode)
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A 25
ns
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = -50 A/µs 35 50
I
RM
Reverse recovery current T
j
= 125 °C
I
F
= 7.5 A, V
R
= 400 V,
dI
F
/dt = -100 A/µs
3.7 5 A
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 7.5 A, V
FR
= 1.5 V,
dI
F
/dt = 100 A/µs
100 ns
V
FP
Forward recovery voltage 2.5 V
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, per diode)
P
F(A V )
(
W)
0
2
4
6
8
10
12
14
16
0123456789
T
d
=tp/T
tp
d
= 0.05
d
= 0.1
d
= 0.2
d
= 0.5
d
= 1
I
F(A V )
(
A)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
T
T
j
j
= 150
= 25
°
°
C
C
I
F
(A)
V
F
(
V)
Figure 3. Forward voltage drop versus forward
current (maximum values, per diode)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-220AB)
0.1
1.0
10.0
100.0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
T
j
= 150
°
C
I
F
(A)
T
j
= 25
°
C
V
F
(
V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Z
t
h(j-c)
/R
TO
-
220AB
t(s)
P
Single pulse
t
h(j-c)