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CDBQR0230R-HF

P1-P3P4-P4
CDBQR0230R-HF
SMD Schottky Barrier Diode
Page 1
REV:C
A
mA
V
V
1
200
30
35
IO
VR
VRRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
C
O
C
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
uA
V
1
0.6
IR
VF
Reverse current
Forward voltage
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
VR = 10 V
IF = 200 mA
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Features
-Low reverse current.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402 standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: cathode band & BB
-Mounting position: Any.
-Weight: 0.001 gram(approx.).
/SOD-923F
Comchip Technology CO., LTD.
mW
125
PD
Power Dissipation
QW-G1097
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0402/SOD-923F
Io = 200 mA
VR = 30 Volts
RoHS Device
Halogen Free
RATING AND CHARACTERISTIC CURVES (CDBQR0230R-HF)
SMD Schottky Barrier Diode
Capacitance between terminals (PF)
Reverse voltage (V)
Reverse current ( A )
Reverse voltage (V)
1u
1n
10u
100n
0 10 20 25
30
Fig. 2 - Reverse characteristics
0
20
40
60
80
100
0 25 50
75
100 125
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
Fig. 3 - Capacitance between
terminals characteristics
1m
0 1510 20
1
10
100
5
25
30
100u
15
5
10n
Page 2
REV:C
O
25 C
O
-25 C
O
75 C
O
125 C
Comchip Technology CO., LTD.
570
540
580
560
590
550
AVG:5 68mV
O
Ta=25 C
IF=200mA
n=30pcs
Fig. 5 - VF Dispersion map
600
0
800
400
1000
200
100
300
500
700
900
Fig. 6 - IR Dispersion map
30
0
40
20
50
10
5
15
25
35
45
Fig. 7 - CT Dispersion map
O
Ta=25 C
VR=10V
n=30pcs
AVG:111nA
AVG:1 8.8 pF
O
Ta=25 C
F=1MHz
VR=0V
n=10pcs
f = 1 MHz
Ta = 25
C
Forward voltage (mV)
Reverse current (nA)
Capacitance between
terminals(pF)
Forward current (mA )
0.2 0.40
1
100
0.5
0.1
0.8
Forward voltage (V)
Fig. 1 - Forward characteristics
1000
0.6
0.3
0.1 0.7
10
O
-2
5
C
O
25
C
O
7
5 C
O
1
2
5 C
150
QW-G1097
SMD Schottky Barrier Diode
Page 3
REV:C
Comchip Technology CO., LTD.
QW-G1097
Index hole
o
12
0
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End
Start
d
E
F
B
W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
B
C
d
D D
2
D
1
E F P P
0
P
1
T
SYMBOL
A
W W
1
(mm)
(inch)
0.026 0.004± 0.045 0.004± 0.024 0.004± 0.061 + 0.004
7.008 0.04±
2.362 MIN.
0.512 0.008±
SYMBOL
(mm)
(inch)
0.069 0.004± 0.138 0.002±
0.157 0.004± 0.157 0.004±
0.079 0.004± 0.009 0.002± 0.315 0.008±
0.531 MAX.
0.75 0.10±
1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05±
8.00 0.20±
13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
P1-P3P4-P4

CDBQR0230R-HF

Mfr. #:
Buy CDBQR0230R-HF
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers VR=30V, IO=200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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