KSC838YTA Datasheet KSC838YTA, KSC838CYBU, KSC838COBU | P1-P3

KSC838

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 35 V

V

CEO

Collector-Emitter Voltage 30 V

V

EBO

Emitter-Base Voltage 4 V

I

C

Collector Current 30 mA

P

C

Collector Power Dissipation 250 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 35 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 30 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 4 V

I

CBO

Collector Cut-off Current V

CB

=30V, I

E

=0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

=4V, I

C

=0 0.1 µA

h

FE

DC Current Gain V

CE

=12V, I

C

=2mA 40 240

V

BE

(on) Base-Emitter On Voltage V

CE

=6V, I

C

=1mA 0.65 0.70 0.75 V

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=10mA, I

B

=1mA 0.1 0.4 V

f

T

Current Gain Bandwidth Product V

CE

=10V, I

C

=1mA 100 250 MHz

C

ob

Output Capacitance V

CB

=10V, I

E

=0, f=1MHz 2.0 3.2 pF

Classification R O Y

h

FE

40 ~ 80 70 ~ 140 120 ~ 240

KSC838

FM Radio RF AMP, MIX, CONV, OSC, IF AMP

• High Current Gain Bandwidth Product : f

T

=250MHz (TYP.)

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1

KSC838

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

012345678910

0

1

2

3

4

5

6

7

8

9

10

I

B

= 90

µ

A

I

B

= 80µA

I

B

= 10

µ

A

I

B

= 20

µ

A

I

B

= 70µA

I

B

= 60µA

I

B

= 50

µ

A

I

B

= 40

µ

A

I

B

= 30

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 100

10

100

1000

V

CE

=12V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10

0.01

0.1

1

10

V

CE(sat)

V

BE(sat)

I

C

=10I

B

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0

4

8

12

16

20

24

28

32

V

CE

=12V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

110100

1

10

f = 1MHz

I

E

=0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

110

10

100

1000

V

CE

=10V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Demensions

KSC838

Dimensions in Millimeters

KSC838YTA

KSC838YTA

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