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MMBZ33VAWT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
August, 2018 − Rev. 5
1 Publication Order Number:
MMBZ27VAW/D
MMBZxxVAWT1G Series,
SZMMBZxxVAWT1G Series
Zener Diodes, 40 Watt Peak
Power
SC−70 Dual Common Anode Zeners
These dual monolithic silicon Zener diodes are designed for
applications requiring protection capability. They are intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment and
other applications. Their dual junction common anode design protects
two separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
Features
• SC−70 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Standard Zener Breakdown Voltage Range: 15 − 33 V
• Peak Power − 40 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
• Low Leakage < 5.0 mA
• Flammability Rating UL 94 V−0
• AEC−Q101 Qualified and PPAP Capable − SZMMBZxxVAWT1G
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These are Pb−Free Devices*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
CATHODE 1
3 ANODE
CATHODE 2
www.onsemi.com
SC−70
CASE 419
STYLE 4
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
1
XX MG
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBZxxVAWT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
SZMMBZxxVAWT1G SC−70
(Pb−Free)
3,000 /
Tape & Reel
(Note: Microdot may be in either location)
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ T
L
≤ 25°C
P
pk
40
W
Total Power Dissipation on FR−5 Board (Note 2)
@ T
A
= 25°C
Derate above 25°C
°P
D
°
200
1.6
°
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
618 °C/W
Junction and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
Device*
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 4)
QV
BR
V
BR
(Note 3) (V) @ I
T
V
C
I
PP
Volts nA Min Nom Max mA V A
mV/5C
MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 46 0.87 30.4
3. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
4. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (°C)
+100 +150
15
12
9
6
3
0
−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +12
5
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(V
BR
@ I
T
)
I
R
(nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 17
5
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80
15 V
5.6 V
P
D
, POWER DISSIPATION (mW)
P1-P3P4-P5

MMBZ33VAWT1G

Mfr. #:
Buy MMBZ33VAWT1G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors SC-70 3 EUT SNGL CPR PBF
Lifecycle:
New from this manufacturer.
Delivery:
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