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BSC047N08NS3GATMA1
P1-P3
P4-P6
P7-P9
BSC047N08NS3 G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥
10 V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
P
tot
[W]
T
C
[°C]
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
D
[A]
T
C
[°C]
Rev. 2.7
page 4
2012-04-04
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
I
D
[A]
V
DS
[V]
limited by
on-state
resistance
single pul
se
0.01
0.02
0.05
0.1
0.2
0.5
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
0000001
Z
thJC
[K/W]
t
p
[s]
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
P
tot
[W]
T
C
[°C]
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
D
[A]
T
C
[°C]
Rev. 2.7
page 4
2012-04-04
BSC047N08NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
4.5 V
5 V
5.5 V
6 V
10 V
0
5
10
15
20
0
2
04
06
08
0
1
0
0
R
DS(on)
[m
Ω
]
I
D
[A]
4.5 V
5 V
5.5 V
6 V
10 V
0
40
80
120
160
0123
I
D
[A]
V
DS
[V]
Rev. 2.7
page 5
2012-04-04
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
4.5 V
5 V
5.5 V
6 V
10 V
0
5
10
15
20
0
2
04
06
08
0
1
0
0
R
DS(on)
[m
Ω
]
I
D
[A]
25 °C
150 °C
0
10
20
30
40
50
60
70
80
90
100
110
120
0123456
I
D
[A]
V
GS
[V]
0
20
40
60
80
100
120
140
160
0
40
80
120
160
g
fs
[S]
I
D
[A]
4.5 V
5 V
5.5 V
6 V
10 V
0
40
80
120
160
0123
I
D
[A]
V
DS
[V]
Rev. 2.7
page 5
2012-04-04
BSC047N08NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=50 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
typ
max
0
2
4
6
8
10
-60
-20
20
60
100
140
180
R
DS(on)
[m
Ω
]
T
j
[°C]
90 µA
900 µA
0
1
2
3
4
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Rev. 2.7
page 6
2012-04-04
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ
max
0
2
4
6
8
10
-60
-20
20
60
100
140
180
R
DS(on)
[m
Ω
]
T
j
[°C]
90 µA
900 µA
0
1
2
3
4
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
10
4
0
2
04
06
08
0
C
[pF]
V
DS
[V]
25 °C
150 °C
25°C, max
150°C, m
ax
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
I
F
[A]
V
SD
[V]
Rev. 2.7
page 6
2012-04-04
P1-P3
P4-P6
P7-P9
BSC047N08NS3GATMA1
Mfr. #:
Buy BSC047N08NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
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BSC047N08NS3GATMA1