2N4427

2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output
stages. Also suitable for oscillator
and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter 20 Vdc
V
CBO
Collector-Base Voltage 40 Vdc
V
EBO
Emitter-Base Voltage 2.0 Vdc
I
C
Collector Current 400 mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, G
PE
= 10dB (Min) @ 175 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCER Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
40 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
20 - - Vdc
ICEO Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
- - 20
µA
ICEX Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc)
- - 100
µA
IEBO Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
- - 100
µA
(on)
HFE DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
10
5
-
-
200
-
-
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
- -
0.5 Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 500 - - MHz
COB Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
-
4.0 - pF
2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
G
PE
Power Gain Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
10 - - dB
Pout Output Power Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
1.0
- - Watts
η
C
Collector Efficiency Test Circuit-Figure 1
Pin = 0.1 W, VCE = 12Vdc
f = 175 MHz
45
- - %
0.00
0.50
1.00
1.50
2.00
2.50
3.00
10.0 35.0 60.0 85.0 110.0 135.0 160.0 185.0 210.0
Pin (mWatts)
Pout (Watts)
Typical device performance

2N4427

Mfr. #:
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT NPN VHF/UHF AM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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