Characteristics STPS30170DJF
2/7 Doc ID 16749 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.65 x I
F(AV)
+ 0.0046 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, anode terminals short circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
Forward rms current 45 A
I
F(AV)
Average forward current T
c
= 80 °C, δ = 0.5 30 A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
T
c
= 25 °C
200 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs, T
j
= 25 °C 12500 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.5 °C/W
Table 4. Static electrical characteristics (anode terminals short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
--15µA
T
j
= 125 °C - 4 12 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
--0.88
V
T
j
= 125 °C - 0.65 0.70
T
j
= 25 °C
I
F
= 30 A
--0.95
T
j
= 125 °C - 0.71 0.79
dPtot
dTj
<
1
Rth(j-a)
