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SI7459DP-T1-GE3

P1-P3P4-P6
Vishay Siliconix
Si7459DP
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
APPLICATIONS
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 30
0.0068 at V
GS
= - 10 V
- 22
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7459DP-T1-E3 (Lead (Pb)-free)
Si7459DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
G
S
D
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 25
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25 °C
I
D
- 22 - 13
A
T
A
= 70 °C - 17 - 10
Pulsed Drain Current I
DM
- 60
Continuous Source Current (Diode Conduction)
a
I
S
- 4.5 - 1.6
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
5.4 1.9
W
T
A
= 70 °C 3.4 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
18 23
°C/W
Steady State 52 65
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.0 1.5
www.vishay.com
2
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
Vishay Siliconix
Si7459DP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Condition Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.0 - 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100
nA
V
DS
= 0 V, V
GS
= ± 25 V
± 200
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 10 V
- 30 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 22 A
0.0056 0.0068 Ω
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 22 A
50 S
Diode Forward Voltage
a
V
SD
I
S
= - 2.9 A, V
GS
= 0 V
- 0.71 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 22 A
113 170
nCGate-Source Charge
Q
gs
17
Gate-Drain Charge
Q
gd
32.5
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 6 Ω
25 40
ns
Rise Time
t
r
20 30
Turn-Off Delay Time
t
d(off)
180 270
Fall Time
t
f
130 200
Gate Resistance
R
g
4 Ω
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 2.9 A, dI/dt = 100 A/µs
100 150 ns
Output Characteristics
0
10
20
30
40
50
60
012345
V
GS
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
4 V
= 10 V thru 5 V
Transfer Characteristics
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
25 °C
T
C
= 125 °C
-55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72631
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
3
Vishay Siliconix
Si7459DP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.002
0.004
0.006
0.008
0.010
0 1020304050
I
D
- Drain Current (A)
V
GS
= 10 V
R
DS(on)
- On-Resistance (Ω)
0
2
4
6
8
10
0 20 40 60 80 100 120
V
DS
= 15 V
I
D
= 22 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
0.1
10
100
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
2000
4000
6000
8000
10000
0 6 12 18 24 30
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 22 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.000
0.004
0.008
0.012
0.016
0.020
0246810
I
D
= 22 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
P1-P3P4-P6

SI7459DP-T1-GE3

Mfr. #:
Buy SI7459DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3
Lifecycle:
New from this manufacturer.
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