1.5KE350A-T

®
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ESDA6V1BC6
QUAD BIDIRECTIONAL TRANSIL™
SUPPRESSOR FOR ESD PROTECTION
REV. 2
SOT23-6L
November 2004
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
Communication systems
Video equipment
This device is particularly adapted to the protec-
tion of symmetrical signals
FEATURES
4 Bidirectional Transil functions
ESD Protection for data, Signal and V
CC
Bus
Stand off voltage range: ± 5 V
Low leakage current < 1µA
Peak pulse power (8/20µs); 80W
DESCRIPTION
The ESDA6V1BC6 is a monolithic array designed
to protect up to 4 lines in a bidirectional way
against ESD transients.
The device is ideal for situations where board
space is at a premium.
BENEFITS
High ESD protection level: up to 25kV
High integration
Suitable for high density boards
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2 level 4:
15kV (air discharge)
8kV (contact discharge)
MIL STD 883E-Method 3015-6: class3
(Human Body Model)
Table 1: Order Code
Part Number Marking
ESDA6V1BC6 BS55
ASD™
Figure 1: Functional Diagram
1
2
3
6
5
4
TM: ASD is a trademark of STMicroelectronics.
ESDA6V1BC6
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Table 2: Absolute Maximum Ratings (T
amb
= 25°C)
Table 3: Electrical Characteristics (T
amb
= 25°C)
Symbol Parameter Value Unit
V
PP
ESD discharge
MIL STD 883C - Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
25
15
8
kV
P
PP
Peak pulse power (8/20µs) 80 W
T
j
Junction temperature 150 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s at 5mm for
case
260 °C
T
op
Operating temperature range (note 1) -40 to +125 °C
Note 1: Variation of parameters is given by curves.
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
C Capacitance
R
d
Dynamic resistance
Type
V
BR
@ I
R
I
RM
@ V
RM
R
d
αTC
min. max. max. typ. max. typ.
note 2 0V bias
VVmAµAV
10
-4
/°C
pF
ESDA6V1BC6 6.1 8 1 1 5 1.35 3 20
Note 2: Square pulse, I
PP
= 3A, t
p
=2.5µs.
Figure 2: Relative variation of peak pulse
power versus initial junction temperature
Figure 3: Peak pulse power versus exponential
pulse duration
P [T initial] / P [T initial=25°C]
PP j PP j
0 25 50 75 100 125 150 175
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
T (°C)
j
P (W)
PP
1 10 100
10
100
500
t (µs)
p
I
V
V
BR
CL
V
RM
I
PP
I
RM
V
Rd
ESDA6V1BC6
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®
1. ESD protection by ESDA6V1-4BC6
With the focus of lowering the operation levels, the problem of malfunction caused by the environment is
critical. Electrostatic discharge (ESD) is a major cause of failure in electronic system.
Transient Voltage Suppressors are an ideal choice for ESD protection and have proven capable in sup-
pressing ESD events. They are capable of clamping the incoming transient to a low enough level such
that damage to the protected semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance.
They serve as parallel protection elements, connected between the signal line to ground. As the transient
rises above the operating voltage of the device, the TVS array becomes a low impedance path diverting
the transient current to ground.
Figure 4: Clamping voltage versus peak pulse
current (typical values, rectangular waveform)
Figure 5: Junction capacitance versus line
voltage applied (typical values
Figure 6: Relative variation of leakage current
versus junction temperature (typical values)
I (A)
PP
0 5 10 15 20 25 30 35 40
0.1
1.0
10.0
20.0
V (V)
CL
t = 2.5µs
T
p
j
initial = 25°C
C(pF)
012345678
10
11
12
13
14
15
16
17
18
19
20
21
22
V (V)
R
F = 1MHz
V = 30mV
T
OSC
j
= 25°C
I [T ] / I [T =25°C]
Rj Rj
25 50 75 100 125 150
1
10
100
500
T (°C)
j

1.5KE350A-T

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
TVS Diodes / ESD Suppressors 1500W 300.0V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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