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NSVRB751S40T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
March, 2018 − Rev. 7
1 Publication Order Number:
RB751S40T1/D
RB751S40
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.28 V (Typ) @ I
F
= 1.0 mAdc
• Low Reverse Current
• Lead−Free Plating
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage V
RM
40 V
Reverse Voltage V
R
30 V
Forward Continuous Current (DC) I
F
30 mA
Peak Forward Surge Current I
FSM
500 mA
ESD Rating: Class 1C per Human Body Model
Class A per Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−5 Minimum Pad.
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
SOD−523
CASE 502
STYLE 1
5E = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
1
2
5E MG
G
12
Device Package Shipping
†
ORDERING INFORMATION
RB751S40T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
NSVRB751S40T1G SOD−523
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
www.onsemi.com
RB751S40T5G SOD−523
(Pb−Free)
8000 / Tape &
Reel
RB751S40
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
30 − − V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 2.0 2.5 pF
Reverse Leakage
(V
R
= 30 V)
I
R
− 300 500 nAdc
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
− 0.28 0.37 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
25°C
125°C
85°C
T
A
= 150°C
0 0.05
V
F
, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.5
0
C
T
, CAPACITANCE (pF)
2.0 4.0
I
F
, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40°C
25°C
I
R
, REVERSE CURRENT (μA)
-55°C
150°C
125°C
1000
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
© Semiconductor Components Industries, LLC, 2002
May, 2002 − Rev. 01O
1 Case Outline Number:
502
SOD−523
CASE 502−01
ISSUE E
DATE 28 SEP 2010
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
XX = Specific Device Code
M Date Code
E
D
−X−
−Y−
b2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D 1.10 1.20 1.30
E 0.70 0.80 0.90
A 0.50 0.60 0.70
b 0.25 0.30 0.35
c 0.07 0.14 0.20
L 0.30 REF
H 1.50 1.60 1.70
12
XX
12
1
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SCALE 4:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
XX
12
M
1
2
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48
0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
http://onsemi.com
1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON11524D
ON SEMICONDUCTOR STANDARD
SOD−523
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
P1-P3P4-P5

NSVRB751S40T1G

Mfr. #:
Buy NSVRB751S40T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS 40V SHTKY SOD523
Lifecycle:
New from this manufacturer.
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