MC74HC573A
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) –0.5 to +7.0 V
V
in
DC Input Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±35 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature –65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(TSSOP or SOIC Package)
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating: SOIC Package: –7 mW/_C from 65_ to 125_C
TSSOP Package: −6.1 mW/°C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types –55 +125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbo
Parameter Test Conditions
V
CC
V
Guaranteed Limit
Unit
–55 to
25_C
v85_C v125_C
V
IH
Minimum High−Level Input Voltage V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low−Level Input Voltage V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1 8
0.5
0.9
1.35
1.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
or V
IL
|I
out
| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
= V
IH
or V
IL
|I
out
| ≤ 2.4mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
V
OL
Maximum Low−Level Output
Voltage
V
out
= 0.1 V or V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
| ≤ 2.4mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
OZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0 ±0.5 ±5.0 ±10
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
II
out
I = 0 mA
6.0 4.0 40 160
mA
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
