IPB120N04S404ATMA1

P1-P3 P4-P6 P7-P8

IPB120N04S4-04

OptiMOS

™

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

120 A

T

C

=100°C, V

GS

=10V

1)

91

Pulsed drain current

1)

I

D,pulse

T

C

=25°C

480

Avalanche energy, single pulse

E

AS

I

D

=60A

75 mJ

Avalanche current, single pulse

I

AS

-

120 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25°C

79 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - 55/175/56

Value

V

DS

40

V

R

DS(on),max

3.6

mW

I

D

120 A

Product Summary

PG-TO263-3-2

Type Package Ordering Code Marking

IPB120N04S4-04 PG-TO263-3-2 - 4N0404

Rev. 1.1 page 1 2014-04-07

IPB120N04S4-04

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

1)

Thermal resistance, junction - case

R

thJC

- - 1.9 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

- - 62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

2)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=40µA

2.0 3.0 4.0

Zero gate voltage drain current

I

DSS

V

DS

=40V, V

GS

=0V,

T

j

=25°C

- 0.01 1 µA

V

DS

=18V, V

GS

=0V,

T

j

=85 °C

2)

- 3 36

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10V, I

D

=100A

- 3.2 3.6 mΩ

Values

Rev. 1.1 page 2 2014-04-07

IPB120N04S4-04

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

1)

D-85579 Neubiberg

Input capacitance

C

iss

- 3150 4100 pF

Output capacitance

C

oss

- 770 1000

Reverse transfer capacitance

C

rss

- 30 70

Turn-on delay time

t

d(on)

- 11 - ns

Rise time

t

r

- 18 -

Turn-off delay time

t

d(off)

- 9 -

Fall time

t

f

- 15 -

Gate Charge Characteristics

1)

Gate to source charge

Q

gs

- 20 26 nC

Gate to drain charge

Q

gd

- 7 16

Gate charge total

Q

g

- 42 55

Gate plateau voltage

V

plateau

- 6.0 - V

Reverse Diode

Diode continous forward current

1)

I

S

- - 120 A

Diode pulse current

1)

I

S,pulse

- - 480

Diode forward voltage

V

SD

V

GS

=0V, I

F

=100A,

T

j

=25°C

- 0.9 1.3 V

Reverse recovery time

1)

t

rr

V

R

=20V, I

F

=I

S

,

di

F

/dt=100A/µs

- 45 - ns

Reverse recovery charge

1)

Q

rr

- 50 - nC

1)

Defined by design. Not subject to production test.

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=20V, V

GS

=10V,

I

D

=120A, R

G

=3.5W

V

DD

=32V, I

D

=120A,

V

GS

=0 to 10V

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.1 page 3 2014-04-07

P1-P3 P4-P6 P7-P8

IPB120N04S404ATMA1

Mfr. #:

Buy IPB120N04S404ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL_30/40V

Lifecycle:

New from this manufacturer.

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IPB120N04S404ATMA1