MAX4810/MAX4811/MAX4812
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
10 ______________________________________________________________________________________
controls the on and off states of the high side FET, INN_
controls the on and off states of the low side FET, INC_
controls the active clamp and EN_ controls the gate to
source short. These signals give complete control of the
output stage of each driver (see Table 1 for all logic
combinations).
The MAX4810/MAX4811/MAX4812 logic inputs are
CMOS logic compatible and the logic level are refer-
enced to V
DD
for maximum flexibility. The low 5pF (typ)
input capacitance of the logic inputs reduces loading
and increases switching speed.
High-Voltage Output Protection
(MAX4811 Only)
The high-voltage outputs of the MAX4811 feature an
integrated overvoltage protection circuit that allows the
user to implement multilevel pulsing by connecting the
outputs of multiple pulser channels in parallel. Internal
diodes in series with the ON_ and OP_ outputs prevent
the body diode of the high-side and low-side FETs from
switching on when a voltage greater than V
NN_
or V
PP_
is present on the output. See Figure 2.
Active Clamps
The MAX4810/MAX4811/MAX4812 feature an active
clamp circuit to improve pulse quality and reduce 2nd
harmonic output. The clamp circuit consists of an N-
channel (DC-coupled) and a P-channel (AC and DC
delay coupled) high-voltage FETs that are switched on
or off by the logic clamp input (INC_). The MAX4810/
MAX4811 feature protected clamp devices, allowing
the clamp circuit to be used in bipolar pulsing circuits
(see Figures 1 and 2). A diode in series with the OCN_
output prevents the body diode of the low-side FET
from turning on when a voltage lower than GND is pre-
sent. Another diode in series with the OCP_ output pre-
vents the body diode of the high-side FET from turning
on when a voltage higher than ground is present. The
MAX4812 does not have diode protection on the clamp
outputs. Thus, the device is suitable for use in circuits
where only unipolar pulsing is required.
The user can connect the active clamp input (INC_) to a
logic-high voltage and drive only the INP_ and INN_
inputs to minimize the number of signals used to drive the
X = Don’t care.
0 = Logic-low.
1 = Logic-high.
INPUTS OUTPUTS
SDHN
EN_ INP_ INN_ INC_
OP_ ON_
OCP_,
OCN_
STATE
0XX
X
0
High
impedance
High
impedance
High
impedance
Powered down, INP_/INN_ disabled, gate-source
short disabled
0XX
X
1
High
impedance
High
impedance
GND
Powered down, INP_/INN_ disabled, gate-source
short disabled
10X
X
0
High
impedance
High
impedance
High
impedance
Powered up, INP_/INN_ disabled, gate-source short
enabled
10X
X
1
High
impedance
High
impedance
GND
Powered up, INP_/INN_ disabled, gate-source short
enabled
1 1000
High
impedance
High
impedance
High
impedance
Powered up, all inputs enabled, gate-source short
disabled
1 1001
High
impedance
High
impedance
GND
Powered up, all inputs enabled, gate-source short
disabled
1 101X
High
impedance
V
NN_
High
impedance
Powered up, all inputs enabled, gate-source short
disabled
1 110X
V
PP_
High
impedance
High
impedance
Powered up, all inputs enabled, gate-source short
disabled
1 111X
V
PP_
V
NN_
High
impedance
Not allowed (3ns maximum overlap)
Table 1. Truth Table
MAX4810/MAX4811/MAX4812
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
______________________________________________________________________________________ 11
device. In this case, whenever both the INP_ and INN_
inputs are low and the INC_ input is high, the active
clamp circuit pulls the output to GND through the OCP_
and OCN_ outputs (see Table 1 for more information).
Power-Supply Ramping and
Gate-Source Short Circuit
The MAX4810/MAX4811/MAX4812 include a gate-
source short circuit that is controlled by the enable input
(EN_). When SHDN is high and EN is low, a 60Ω switch
shorts together the gate and source of the high-side out-
put FET. At the same time, a similar switch shorts the
gate and source of the low-side output FET (Table 1).
The gate-source short circuit prevents accidental turn-
on of the output FETs due to the ramping voltage on
V
PP_
and V
NN_
, and allows for faster ramping rates and
smaller delay times between pulsing modes.
Shutdown Mode
SHDN is common to both channel 1 and channel 2 and
powers up or down the device. Drive SHDN low to power
down all internal circuits (except the clamp circuits).
When SHDN is low, the device is in the lowest power
state (1µA) and the gate-source short circuit is disabled.
The device takes 1µs (typ) to become active when SHDN
is disabled.
Thermal Protection
A thermal shutdown circuit with a typical threshold of
+150°C prevents damage due to excessive power dis-
sipation. When the junction temperature exceeds T
J
=
+150°C, all outputs are disabled. Normal operation typ-
ically resumes after the IC’s junction temperature drops
below +130°C.
Applications Information
AC-Coupling Capacitor Selection
The value of all AC-coupling capacitors (between C
DP_
and C
GP
, and between C
DN_
and C
GN_
) should be
between 1nF to 10nF. The voltage rating of the capaci-
tor should be at least as high as V
PP_
. The capacitors
should be placed as close as possible to the device.
Because INP_ and part of INC_ are AC-coupled to the
output devices, they cannot be driven high indefinitely
when the device is active.
Power Dissipation
The power dissipation of the MAX4810/MAX4811/
MAX4812 consists of three major components caused
by the current consumption from V
CC_
,V
PP_
, and V
NN_
.
The sum of these components (P
VCC_
, P
VPP_
and
P
VNN_
) must be kept below the maximum power-dissi-
pation limit. See the
Typical Operating Characteristics
section for more information on typical supply currents
versus switching frequencies.
The device consumes most of the supply current from
V
CC_
supply to charge and discharge internal nodes
such as the gate capacitance of the high-side FET (C
P
)
and the low-side FET (C
N
). Neglecting the small quies-
cent supply current and a small amount of current used
to charge and discharge the capacitances at the inter-
nal gate clamp FETs, the power consumption can be
estimated as follows:
Where f
INN
and f
INP
are the switching frequency of the
inputs INN, INP respectively, and where BRF is the
burst repitition frequency and BTD is the burst time
duration. The typical value of the gate capacitances of
the power FET are C
N
= 0.2nF, C
P
= 0.4nF.
For an output load that has a resistance of R
L
and
capacitance of C
L
, the MAX4810/MAX4811/MAX4812
power dissipation can be estimated as follows (assume
square wave output and neglect the resistance of the
switches):
where C
O
is the output capacitance of the device.
Power Supplies and Bypassing
The MAX4810/MAX4811/MAX4812 operate from inde-
pendent supply voltage sets (only V
DD
and V
SS
are
common to both channels). The logic input circuit oper-
ates from a +2.7V to +6V single supply (V
DD
). The
level-shift driver dual supplies, V
CC_
/V
EE_
operate from
±4.75V to ±12.6V.
The V
PP_
/V
NN_
high-side and low-side supplies are dri-
ven from a single positive supply up to +220V, from a
single negative supply up to -200V, or from ±110V dual
supplies. Either V
PP_
or V
NN_
can be set at 0. Bypass
each supply input to ground with a 0.1µF capacitor as
close as possible to the device.
Depending on the load of the input, additional bypass-
ing may be needed to keep the output of V
NN_
and
V
PP_
stable during output transitions. For example, with
P
VPP
=+
()
××
()
+CC f V V
V
R
OLIN PP NN
PP
L
__
_
2
2
××
××
()
1
2
BRF BTD
P
VCC
×
()
×
()
×CV f CV f BR
NCC IN PCC IN__
22
FFBTD
ff f
IN INN INP
×
()
=+
MAX4810/MAX4811/MAX4812
Dual, Unipolar/Bipolar, High-Voltage
Digital Pulsers
12 ______________________________________________________________________________________
C
OUT
= 100pF and R
OUT
= 100Ω load, additional 10µF
(typ) capacitor is recommended. V
SS
is the substrate
voltage and must be connected to a voltage equal to or
more negative than the more negative voltage of V
NN1
or V
NN2
.
Exposed Pad and Layout Concerns
The MAX4810/MAX4811/MAX4812 provide an exposed
pad (EP) underneath the TQFN package for improved
thermal performance. EP is internally connected to V
SS
.
Connect EP to V
SS
externally and do not run traces
under the package to avoid possible short circuits. To
aid heat dissipation, connect EP to a similarly sized pad
on the component side of the PCB. This pad should be
connected through to the solder-side copper by several
plated holes to a large heat spreading copper area to
conduct heat away from the device.
The MAX4810/MAX4811/MAX4812 high-speed pulsers
require low-inductance bypass capacitors to their sup-
ply inputs. High-speed PCB trace design practices are
recommended. Pay particular attention to minimize
LEVEL
SHIFTER
V
DD
V
CC_
C
DP_
INP_
V
PP_
C
GP_
OP_
V
SS
LEVEL
SHIFTER
V
DD
V
CC_
V
SS
OCN_
GND
LEVEL
SHIFTER
V
DD
V
CC_
C
DN_
INN_
V
SS
ON_
V
NN_
C
GN_
V
SS
SHORT
CIRCUIT
LEVEL
SHIFTER
V
DD
V
EE_
C
DC_
C
GC_
INC_
EN_
GND
_
OCP_
V
SS
MAX4810
SHDN
C
GC_
GND
C
DC_
V
EE_
C
DN_
C
GN_
V
DD
V
CC_
C
DP_
C
GP_
Figure 1. MAX4810 Simplified Functional Diagram for One Channel

MAX4810CTN+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Timers & Support Products Dual Uni/Bi-polar Digital Pulser
Lifecycle:
New from this manufacturer.
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