Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 8: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 9: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
I
VTT
Termination reference current from V
TT
–600
600 mA
V
TT
Termination reference voltage (DC) com-
mand/address bus
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V 1
I
I
Input leakage current; Any
input 0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All
other pins not under test =
0V)
Address in-
puts, RAS#,
CAS#, WE#,
BA
–36 0 36 µA
S#, CKE,
ODT, CK, CK#
–18 0 18
DM –4 0 4
I
OZ
Output leakage current; 0V
V
OUT
V
DDQ
; DQ and
ODT are disabled; ODT is
HIGH
DQ, DQS,
DQS#
–10 0 10 µA
I
VREF
V
REF
supply leakage current; V
REFDQ
= V
DD
/
2 or V
REFCA
= V
DD
/2 (All other pins not un-
der test = 0V)
–18 0 18 µA
T
A
Module ambient operating
temperature
Commercial 0
70 °C 2, 3
Industrial –40
85 °C
T
C
DDR3 SDRAM component
case operating temperature
Commercial 0
95 °C 2, 3, 4
Industrial –40
95 °C
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,”
available on Micron’s Web site.
4.
The refresh rate is required to double when 85°C < T
C
95°C.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Electrical Specifications
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jsf18c256_512x72az.pdf – Rev. C 3/11 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
DRAM Operating Conditions
PDF: 09005aef83606b46
jsf18c256_512x72az.pdf – Rev. C 3/11 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 2GB
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1188 1098 1008 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
1368 1278 1188 mA
Precharge power-down current: Slow exit I
DD2P0
2
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
2
810 720 630 mA
Precharge quiet standby current I
DD2Q
2
1206 1080 954 mA
Precharge standby current I
DD2N
2
1260 1170 990 mA
Precharge standby ODT current I
DD2NT
1
963 873 783 mA
Active power-down current I
DD3P
2
810 720 630 mA
Active standby current I
DD3N
2
1206 1116 1026 mA
Burst read operating current I
DD4R
1
2358 1908 1548 mA
Burst write operating current I
DD4W
1
2358 2088 1818 mA
Refresh current I
DD5B
2
4680 4320 3960 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
108 108 108 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
162 162 162 mA
All banks interleaved read current I
DD7
1
5508 4518 3618 mA
Reset current I
DD8
2
252 252 252 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef83606b46
jsf18c256_512x72az.pdf – Rev. C 3/11 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT18JSF51272AZ-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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